5秒后页面跳转
捷配首页

Datasheet > MJF18009
MJF18009 PDF预览

MJF18009

更新时间： 2024-11-02 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关局域网
页数 文件大小 规格书
10页 435K
描述
POWER TRANSISTORS

阅读下载

中文翻译

获取价格

MJF18009 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SFM包装说明：FLANGE MOUNT, R-PSFM-T3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.46
外壳连接：ISOLATED最大集电极电流 (IC)：10 A
集电极-发射极最大电压：450 V配置：SINGLE
最小直流电流增益 (hFE)：7JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：50 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：12 MHzBase Number Matches：1

MJF18009 数据手册

 浏览型号MJF18009的Datasheet PDF文件第2页浏览型号MJF18009的Datasheet PDF文件第3页浏览型号MJF18009的Datasheet PDF文件第4页浏览型号MJF18009的Datasheet PDF文件第5页浏览型号MJF18009的Datasheet PDF文件第6页浏览型号MJF18009的Datasheet PDF文件第7页 
Order this document  
by MJE18009/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
10 AMPERES  
The MJE/MJF18009 has an application specific state–of–the–art die designed for  
use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light  
ballast”). These high voltage/high speed transistors exhibit the following main  
features:  
1000 VOLTS  
50 and 150 WATTS  
•
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Full Characterization at 125 C  
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric  
Distributions  
•
•
•
•
Specified Dynamic Saturation Data  
Two Package Choices: Standard TO–220 or Isolated TO–220  
MAXIMUM RATINGS  
Rating  
Symbol MJE18009 MJF18009  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Collector–Base Breakdown Voltage  
Emitter–Base Voltage  
V
450  
1000  
1000  
9
CEO  
V
CES  
CBO  
EBO  
V
V
Collector Current — Continuous  
— Peak (1)  
I
10  
20  
C
CASE 221A–06  
TO–220AB  
I
CM  
Base Current — Continuous  
— Peak (1)  
I
4
8
Adc  
B
I
BM  
*Total Device Dissipation @ T = 25°C  
*Derate above 25 C  
P
D
150  
1.2  
50  
0.4  
Watt  
W/ C  
C
Operating and Storage Temperature  
T , T  
stg  
–65 to 150  
4500  
C
V
J
RMS Isolation Voltage (2)  
Per Figure 22  
V
ISOL1  
ISOL2  
ISOL3  
(1s, 25°C, Humidity ≤ 30%)  
Per Figure 23  
Per Figure 24  
V
V
3500  
1500  
T
C
= 25°C  
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18009 MJF18009  
Unit  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
0.83  
62.5  
2.5  
62.5  
C/W  
CASE 221D–02  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
C
TO–220 FULLPACK  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995
1234567...10

中文翻译

下载PDF

与MJF18009相关器件

型号 品牌 获取价格 描述 数据表
MJF18204 MOTOROLA

获取价格

 		POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
MJF18204 ONSEMI

获取价格

 		POWER TRANSISTORS
MJF18206 MOTOROLA

获取价格

 		POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS
MJF18206 ONSEMI

获取价格

 		POWER TRANSISTORS
MJF2955 ONSEMI

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS
MJF2955 MOTOROLA

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS
MJF2955G ONSEMI

获取价格

 		Complementary Silicon Power Transistors
MJF3055 MOTOROLA

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS 10 AMPERES 90 VOLTS 30 WATTS
MJF3055 ONSEMI

获取价格

 		COMPLEMENTARY SILICON POWER TRANSISTORS
MJF3055_08 ONSEMI

获取价格

 		Complementary Silicon Power Transistors

与MJF18009相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证