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MJF18008G PDF预览

MJF18008G

更新时间： 2024-11-19 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管
页数 文件大小 规格书
10页 225K
描述
NPN Bipolar Power Transistor For Switching Power Supply Applications

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中文翻译

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MJF18008G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：1.43其他特性：UL RECOGNIZED
外壳连接：ISOLATED最大集电极电流 (IC)：8 A
集电极-发射极最大电压：450 V配置：SINGLE
最小直流电流增益 (hFE)：6JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：45 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：13 MHzBase Number Matches：1

MJF18008G 数据手册

 浏览型号MJF18008G的Datasheet PDF文件第2页浏览型号MJF18008G的Datasheet PDF文件第3页浏览型号MJF18008G的Datasheet PDF文件第4页浏览型号MJF18008G的Datasheet PDF文件第5页浏览型号MJF18008G的Datasheet PDF文件第6页浏览型号MJF18008G的Datasheet PDF文件第7页 
MJE18008G, MJF18008G  
SWITCHMODEt  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE/MJF18008G have an applications specific state−of−the−art  
die designed for use in 220 V line−operated SWITCHMODE Power  
supplies and electronic light ballasts.  
http://onsemi.com  
Features  
POWER TRANSISTOR  
8.0 AMPERES  
• Improved Efficiency Due to Low Base Drive Requirements:  
♦ High and Flat DC Current Gain h  
♦ Fast Switching  
FE  
1000 VOLTS  
45 and 125 WATTS  
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
• Tight Parametric Distributions are Consistent Lot−to−Lot  
• Two Package Choices: Standard TO−220 or Isolated TO−220  
MARKING  
DIAGRAMS  
• MJF18008, Case 221D, is UL Recognized at 3500 V  
: File  
RMS  
#E69369  
• These Devices are Pb−Free and are RoHS Compliant*  
MAXIMUM RATINGS  
MJE18008G  
AYWW  
Rating  
Symbol  
Value  
450  
Unit  
TO−220AB  
CASE 221A−09  
STYLE 1  
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
1
V
1000  
9.0  
CES  
EBO  
2
3
V
Collector Current − Continuous  
− Peak (Note 1)  
I
8.0  
16  
C
I
I
CM  
Base Current  
− Continuous  
− Peak (Note 1)  
I
4.0  
8.0  
Adc  
V
B
BM  
RMS Isolation Voltage (Note 2)  
Test No. 1 Per Figure 22a  
V
ISOL  
MJF18008  
4500  
MJF18008G  
AYWW  
Test No. 1 Per Figure 22b  
Test No. 1 Per Figure 22c  
(for 1 sec, R.H. < 30%, T = 25_C)  
Total Device Dissipation @ T = 25_C  
3500  
1500  
TO−220 FULLPACK  
CASE 221D  
STYLE 2  
UL RECOGNIZED  
A
1
2
P
D
W
W/_C  
C
3
MJE18008  
MJF18008  
MJE18008  
MJF18008  
125  
45  
1.0  
0.36  
Derate above 25°C  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
Operating and Storage Temperature  
T , T  
−65 to 150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
WW  
= Work Week  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
q
JC  
_C/W  
MJE18008  
1.0  
2.78  
MJF18008  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 7 of this data sheet.  
Thermal Resistance, Junction−to−Ambient  
R
62.5  
260  
_C/W  
_C  
q
JA  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Proper strike and creepage distance must be provided.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 7  
MJE18008/D  
 
1234567...10

中文翻译

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MJF18008G 替代型号

型号 品牌 替代类型 描述 数据表
MJF18008 ONSEMI

完全替代

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