Datasheet > MJF18006

MJF18006

更新时间： 2024-11-03 10:55:43

品牌	Logo	应用领域
锦美电子 - JMNIC		晶体晶体管
页数	文件大小	规格书
3页	43K
描述
Silicon NPN Power Transistors

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MJF18006 数据手册

Product Specification

www.jmnic.com

Silicon NPN Power Transistors

MJF18006

DESCRIPTION

·With TO-220F package

·High voltage ,high speed

·Improved efficiency due to low base

drive requirements:

-High and flat DC current gain h_FE

-Fast switching

APPLICATIONS

·Designed for use in 220V line-operated

switchmode power supplies and electronic

light ballasts.

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings(Tc=25℃)

SYMBOL

PARAMETER

CONDITIONS

Open emitter

VALUE

UNIT

V_CBO

Collector-base voltage

1000

V_CEO

V_EBO

I_C

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

Open base

450

Open collector

I_CM

I_B

I_BM

P_D

Base current-Peak

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

Thermal resistance junction to ambient

MAX

UNIT

R_{th j-C}

R_{th j-A}

3.125

℃/W

62.5

℃/W

JMnic

12 3

中文翻译

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