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MJF18008 PDF预览

MJF18008

更新时间: 2024-11-19 10:55:43
品牌 Logo 应用领域
锦美电子 - JMNIC 晶体晶体管
页数 文件大小 规格书
3页 43K
描述
Silicon NPN Power Transistors

MJF18008 数据手册

 浏览型号MJF18008的Datasheet PDF文件第2页浏览型号MJF18008的Datasheet PDF文件第3页 
Product Specification  
www.jmnic.com  
Silicon NPN Power Transistors  
MJF18008  
DESCRIPTION  
·
·With TO-220F package  
·High voltage ,high speed  
·Improved efficiency due to low base  
rive requirements:  
-High and flat DC current gain hFE  
-Fast switching  
APPLICATIONS  
·Designed for use in 220V line-operated  
switchmode power supplies and electronic  
light ballasts.  
PINNING  
PIN  
DESCRIPTION  
1
Base  
2
3
Collector  
Emitter  
Fig.1 simplified outline (TO-220F) and symbol  
Absolute maximum ratings(Tc=25)  
SYMBOL  
PARAMETER  
CONDITIONS  
Open emitter  
VALUE  
UNIT  
VCBO  
Collector-base voltage  
1000  
V
VCEO  
VEBO  
IC  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Base current  
Open base  
450  
V
V
Open collector  
9
8
A
ICM  
IB  
16  
A
4
8
A
IBM  
PD  
Base current-Peak  
A
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
45  
W
Tj  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
Thermal resistance junction to ambient  
VALUE  
UNIT  
Rth j-C  
Rth j-A  
2.78  
/W  
62.5  
/W  
JMnic  

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