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MJF18004 PDF预览

MJF18004

更新时间: 2024-11-02 22:30:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
10页 424K
描述
POWER TRANSISTOR

MJF18004 技术参数

是否无铅: 含铅生命周期:End Of Life
零件包装代码:TO-220AB包装说明:CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.24
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):5 A集电极-发射极最大电压:450 V
配置:SINGLE最小直流电流增益 (hFE):6
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:NPN最大功率耗散 (Abs):35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):13 MHz
Base Number Matches:1

MJF18004 数据手册

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Order this document  
by MJE18004/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Bipolar Power Transistor  
*Motorola Preferred Device  
For Switching Power Supply Applications  
The MJE/MJF18004 have an applications specific state–of–the–art die designed  
for use in 220 V line operated Switchmode Power supplies and electronic light  
ballasts. This high voltage/high speed transistors offer the following:  
POWER TRANSISTOR  
5.0 AMPERES  
1000 VOLTS  
35 and 75 WATTS  
Improved Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Turn–Off (No Current Tail)  
Full Characterization at 125 C  
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric  
Distributions  
Two Package Choices: Standard TO–220 or Isolated TO–220  
MJF18004, Case 221D, is UL Recognized at 3500 V  
: File #E69369  
RMS  
MAXIMUM RATINGS  
Rating  
Symbol MJE18004 MJF18004  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Sustaining Voltage  
Collector–Emitter Breakdown Voltage  
Emitter–Base Voltage  
V
450  
1000  
9.0  
CEO  
CASE 221A–06  
TO–220AB  
MJE18004  
V
CES  
EBO  
V
Collector Current — Continuous  
— Peak(1)  
I
5.0  
10  
C
I
CM  
Base Current — Continuous  
— Peak(1)  
I
2.0  
4.0  
Adc  
B
I
BM  
RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a  
V
ISOL  
4500  
3500  
1500  
Volts  
(for 1 sec, R.H.  
Test No. 2 Per Fig. 22b  
Test No. 3 Per Fig. 22c  
< 30%, T = 25 C)  
A
Total Device Dissipation  
Derate above 25 C  
(T = 25 C)  
C
P
D
75  
0.6  
35  
0.28  
Watts  
W/ C  
Operating and Storage Temperature  
T , T  
J stg  
65 to 150  
C
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18004 MJF18004  
Unit  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
R
1.65  
62.5  
3.55  
62.5  
C/W  
θJC  
θJA  
CASE 221D–02  
ISOLATED TO–220 TYPE  
MJF18004  
Maximum Lead Temperature for Soldering  
Purposes: 1/8from Case for 5 Seconds  
T
260  
C
L
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)  
V
450  
Vdc  
µAdc  
µAdc  
C
CEO(sus)  
Collector Cutoff Current (V  
= Rated V  
, I = 0)  
I
CEO  
100  
CE  
CE  
CEO  
B
Collector Cutoff Current (V  
= Rated V  
, V  
= 0)  
(T = 25 C)  
I
100  
500  
100  
CES EB  
C
CES  
(T = 125 C)  
C
Collector Cutoff Current (V  
= 800 V, V  
= 0)  
(T = 125 C)  
C
CE  
EB  
Emitter Cutoff Current (V  
EB  
= 9.0 Vdc, I = 0)  
I
100  
µAdc  
C
EBO  
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle  
10%.  
(continued)  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
REV 3  
Motorola, Inc. 1995

MJF18004 替代型号

型号 品牌 替代类型 描述 数据表
MJF18004G ONSEMI

完全替代

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