Datasheet > MJF18006

MJF18006

更新时间： 2024-11-03 10:55:43

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	40K
描述
Silicon NPN Power Transistors

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中文翻译

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数据手册

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MJF18006 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJF18006

DESCRIPTION

·With TO-220F package

·High voltage ,high speed

APPLICATIONS

·Designed for use in 220V line-operated

switchmode power supplies and electronic

light ballasts

PINNING

DESCRIPTION

Base

Collector

Emitter

Fig.1 simplified outline (TO-220F) and symbol

Absolute maximum ratings(Tc=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

CONDITIONS

Open emitter

VALUE

UNIT

1000

Open base

450

Open collector

I_CM

I_B

I_BM

Base current-Peak

P_D

Total power dissipation

Junction temperature

Storage temperature

T_C=25℃

℃

T_j

150

T_stg

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance junction to case

Thermal resistance junction to ambient

MAX

3.12

62.5

UNIT

℃/W

R_{th j-C}

R_{th j-A}

12 3

中文翻译

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