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MJF18004G PDF预览

MJF18004G

更新时间： 2024-11-03 10:55:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体开关晶体管
页数 文件大小 规格书
11页 221K
描述
NPN Bipolar Power Transistor For Switching Power Supply Applications

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中文翻译

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MJF18004G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, CASE 221D-03, ISOLATED TO-220, FULL PACK-3
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：0.86
其他特性：UL RECOGNIZED外壳连接：ISOLATED
最大集电极电流 (IC)：5 A集电极-发射极最大电压：450 V
配置：SINGLE最小直流电流增益 (hFE)：6
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：35 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：13 MHz
Base Number Matches：1

MJF18004G 数据手册

 浏览型号MJF18004G的Datasheet PDF文件第2页浏览型号MJF18004G的Datasheet PDF文件第3页浏览型号MJF18004G的Datasheet PDF文件第4页浏览型号MJF18004G的Datasheet PDF文件第5页浏览型号MJF18004G的Datasheet PDF文件第6页浏览型号MJF18004G的Datasheet PDF文件第7页 
MJE18004G, MJF18004G  
SWITCHMODEt  
NPN Bipolar Power Transistor  
For Switching Power Supply Applications  
The MJE/MJF18004G have an applications specific state−of−the−art  
die designed for use in 220 V line−operated SWITCHMODE Power  
supplies and electronic light ballasts.  
http://onsemi.com  
Features  
POWER TRANSISTOR  
5.0 AMPERES  
• Improved Efficiency Due to Low Base Drive Requirements:  
♦ High and Flat DC Current Gain h  
♦ Fast Switching  
FE  
1000 VOLTS  
35 and 75 WATTS  
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)  
• Full Characterization at 125_C  
MARKING  
DIAGRAMS  
• ON Semiconductor Six Sigma Philosophy Provides Tight and  
Reproducible Parametric Distributions  
• Two Package Choices: Standard TO−220 or Isolated TO−220  
• MJF18004, Case 221D, is UL Recognized at 3500 V  
: File  
RMS  
#E69369  
• These Devices are Pb−Free and are RoHS Compliant*  
MJE18004G  
AYWW  
MAXIMUM RATINGS  
TO−220AB  
CASE 221A−09  
STYLE 1  
Rating  
Symbol  
Value  
450  
Unit  
1
Collector−Emitter Sustaining Voltage  
Collector−Base Breakdown Voltage  
Emitter−Base Voltage  
V
CEO  
Vdc  
Vdc  
Vdc  
Adc  
2
3
V
V
1000  
9.0  
CES  
EBO  
Collector Current − Continuous  
− Peak (Note 1)  
I
5.0  
10  
C
I
CM  
Base Current  
− Continuous  
I
2.0  
4.0  
Adc  
V
B
− Peak (Note 1)  
I
BM  
MJF18004G  
AYWW  
RMS Isolation Voltage (Note 2)  
V
MJF18004  
4500  
ISOL  
Test No. 1 Per Figure 22a  
Test No. 2 Per Figure 22b  
Test No. 3 Per Figure 22c  
3500  
1500  
TO−220 FULLPACK  
CASE 221D  
1
(for 1 sec, R.H. < 30%, T = 25_C)  
A
2
3
STYLE 2  
Total Device Dissipation @ T = 25_C  
P
W
W/_C  
C
D
UL RECOGNIZED  
MJE18004  
MJF18004  
MJE18004  
MJF18004  
75  
35  
0.6  
0.28  
Derate above 25°C  
G
A
Y
WW  
= Pb−Free Package  
= Assembly Location  
= Year  
Operating and Storage Temperature  
T , T  
−65 to 150  
_C  
J
stg  
THERMAL CHARACTERISTICS  
= Work Week  
Characteristics  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
R
q
JC  
_C/W  
MJE18004  
1.65  
3.55  
ORDERING INFORMATION  
MJF18004  
See detailed ordering and shipping information in the package  
dimensions section on page 8 of this data sheet.  
Thermal Resistance, Junction−to−Ambient  
R
62.5  
260  
_C/W  
_C  
q
JA  
Maximum Lead Temperature for Soldering  
Purposes 1/8″ from Case for 5 Seconds  
T
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.  
*For additional information on our Pb−Free strategy  
and soldering details, please download the  
ON Semiconductor Soldering and Mounting  
Techniques Reference Manual, SOLDERRM/D.  
2. Proper strike and creepage distance must be provided.  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
April, 2010 − Rev. 9  
MJE18004/D  
 
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中文翻译

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MJF18004G 替代型号

型号 品牌 替代类型 描述 数据表
MJF18004 ONSEMI

完全替代

 POWER TRANSISTOR
NTE379 NTE

功能相似

 Silicon NPN Transistor Power Amp, High Voltage, Switch

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