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MJE3439G

更新时间： 2024-11-21 10:55:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
4页 55K
描述
NPN Silicon High−Voltage Power Transistor

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中文翻译

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MJE3439G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-225AA包装说明：ROHS COMPLIANT, CASE 77-09, TO-225, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.73Is Samacsys：N
最大集电极电流 (IC)：0.3 A集电极-发射极最大电压：350 V
配置：SINGLE最小直流电流增益 (hFE)：15
JEDEC-95代码：TO-225AAJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：NPN最大功率耗散 (Abs)：15 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管元件材料：SILICON
标称过渡频率 (fT)：15 MHzBase Number Matches：1

MJE3439G 数据手册

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MJE3439  
NPN Silicon High−Voltage  
Power Transistor  
This device is designed for use in line−operated equipment  
requiring high f .  
T
Features  
http://onsemi.com  
• High DC Current Gain − h = 40−160 @ I  
FE  
C
= 20 mAdc  
0.3 AMPERE  
POWER TRANSISTOR  
NPN SILICON  
• Current Gain Bandwidth Product − f = 15 MHz (Min) @ I  
T
C
= 10 mAdc  
• Low Output Capacitance − C = 10 pF (Max) @ f  
ob  
350 VOLTS, 15 WATTS  
= 1.0 MHz  
• Pb−Free Package is Available*  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
Base Current  
Symbol  
Value  
350  
450  
5.0  
Unit  
TO−225  
CASE 77  
STYLE 1  
V
CEO  
Vdc  
Vdc  
V
CB  
EB  
3
2
1
V
Vdc  
I
C
I
B
0.3  
Adc  
150  
mAdc  
P
15  
0.12  
W
MARKING DIAGRAM  
Total Power Dissipation @ T = 25_C  
C
D
Derate above 25_C  
mW/_C  
_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
YWW  
E3439G  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
q
8.33  
_C/W  
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Y
= Year  
WW  
= Work Week  
E3439 = Device Code  
G
= Pb−Free Package  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MJE3439  
TO−225  
500 Units/Box  
500 Units/Box  
TO−225  
MJE3439G  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 11  
MJE3439/D  
1234

中文翻译

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MJE3439G 替代型号

型号 品牌 替代类型 描述 数据表
MJE3439 CENTRAL

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