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MJE3440 PDF预览

MJE3440

更新时间: 2024-11-20 22:46:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
5页 70K
描述
SILICON NPN TRANSISTOR

MJE3440 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SIP包装说明:PLASTIC PACKAGE-3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.29
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):0.3 A基于收集器的最大容量:10 pF
集电极-发射极最大电压:250 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN功耗环境最大值:15 W
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):15 MHzVCEsat-Max:0.5 V
Base Number Matches:1

MJE3440 数据手册

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MJE3440  
SILICON NPN TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPE  
NPN TRANSISTOR  
DESCRIPTION  
The MJE3440 is a NPN silicon epitaxial planar  
transistors in SOT-32 plastic package. It is  
designed for use in consumer and industrial  
line-operated applications.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
Value  
Unit  
V
350  
250  
V
5
0.3  
V
A
IB  
0.15  
A
Base Current  
Total Power Dissipation at Tcase 25 oC  
Ptot  
15  
W
oC  
oC  
Tstg  
Tj  
-65 to +150  
150  
Storage Temperature  
Max. Operating Junction Temperature  
1/5  
June 1997  

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