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MJE350G PDF预览

MJE350G

更新时间： 2024-11-06 10:55:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
3页 134K
描述
Plastic Medium Power PNP Silicon Transistor

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中文翻译

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MJE350G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-225包装说明：ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：1 week
风险等级：0.64最大集电极电流 (IC)：0.5 A
集电极-发射极最大电压：300 V配置：SINGLE
最小直流电流增益 (hFE)：30JEDEC-95代码：TO-225
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：20 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Matte Tin (Sn) - annealed端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MJE350G 数据手册

 浏览型号MJE350G的Datasheet PDF文件第2页浏览型号MJE350G的Datasheet PDF文件第3页 
MJE350  
Plastic Medium Power  
PNP Silicon Transistor  
This device is designed for use in line−operated applications such as  
low power, line−operated series pass and switching regulators  
requiring PNP capability.  
http://onsemi.com  
Features  
• High Collector−Emitter Sustaining Voltage −  
0.5 AMPERE  
POWER TRANSISTOR  
PNP SILICON  
V
= 300 Vdc @ I  
= 1.0 mAdc  
CEO(sus)  
C
• Excellent DC Current Gain −  
h
= 30−240 @ I  
300 VOLTS, 20 WATTS  
FE  
C
= 50 mAdc  
• Plastic Thermopad Package  
• Pb−Free Package is Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
300  
Unit  
Vdc  
TO−225  
CASE 77  
STYLE 1  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Collector Current − Continuous  
V
CEO  
V
3.0  
Vdc  
3
2
1
EB  
I
500  
mAdc  
C
Total Power Dissipation @ T = 25_C  
P
20  
W
C
D
0.16  
mW/_C  
Derate above 25_C  
MARKING DIAGRAM  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
_C  
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
YWW  
JE350G  
Thermal Resistance, Junction−to−Case  
q
6.25  
_C/W  
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Y
= Year  
WW  
= Work Week  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
JE350 = Device Code  
C
G
= Pb−Free Package  
Characteristic  
Symbol Min Max  
Unit  
OFF CHARACTERISTICS  
Collector−Emitter Sustaining Voltage  
V
300  
−
−
Vdc  
mAdc  
mAdc  
CEO(sus)  
(I = 1.0 mAdc, I = 0)  
C
B
ORDERING INFORMATION  
Collector Cutoff Current  
(V = 300 Vdc, I = 0)  
I
I
100  
100  
CBO  
EBO  
CB  
E
Device  
Package  
Shipping  
Emitter Cutoff Current  
(V = 3.0 Vdc, I = 0)  
−
MJE350  
TO−225  
500 Units/Box  
500 Units/Box  
EB  
C
TO−225  
MJE350G  
ON CHARACTERISTICS  
(Pb−Free)  
DC Current Gain  
h
FE  
30  
240  
−
(I = 50 mAdc, V = 10 Vdc)  
C
CE  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
January, 2007 − Rev. 14  
MJE350/D  
123

中文翻译

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MJE350G 替代型号

型号 品牌 替代类型 描述 数据表
KSE350STU ONSEMI

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