Datasheet > MJE350

MJE350

更新时间： 2024-09-16 04:15:31

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页数	文件大小	规格书
2页	73K
描述
PNP EPITAXIAL SILICON POWER TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

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MJE350 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

MJE350 数据手册

Transys

Electronics

I M I T E D

PNP EPITAXIAL SILICON POWER TRANSISTOR

MJE350

TO126

Plastic Package

Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series

Pass and Switching Regulators

ABSOLUTE MAXIMUM RATINGS

VALUE

300

3.0

DESCRIPTION

SYMBOL

V_CEO

V_CBO

V_EBO

I_C

UNIT

Collector -Emitter Voltage

Collector -Base Voltage

Emitter Base Voltage

500

1.25

0.16

Collector Current Continuous

Power Dissipation @ T_a=25ºC

mW/ºC

P_D

Derate above 25ºC

Power Dissipation @ T_c=25ºC

Derate above 25ºC

P_D

W/ºC

Operating And Storage Junction

Temperature Range

T_j, T_stg

- 65 to +150

ºC

THERMAL CHARACTERISTICS

Junction to Ambient in free air

R_{th (j-a)}

R_{th (j-c)}

100

ºC/W

Junction to Case

6.25

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

MIN

DESCRIPTION

SYMBOL

TEST CONDITION

MAX

UNIT

V_{CEO (sus)}

I_C=1mA, I_B=0

V_CB=300V_,I_E=0

V_EB=3V, I_C=0

300

Collector Emitter Sustaining Voltage

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

100

240

CBO

I_EBO

h_FE

I_C=50mA, V_CE=10V

中文翻译

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