Datasheet > MJE371

MJE371

更新时间： 2024-11-21 10:55:47

品牌	Logo	应用领域
SAVANTIC		晶体晶体管局域网
页数	文件大小	规格书
3页	100K
描述
Silicon PNP Power Transistors

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MJE371 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

MJE371

DESCRIPTION

·With TO-126 package

·Complement to type MJE521

APPLICATIONS

·For use in general-purpose amplifer

and switching circuits,

·Recommended for use in 5 to 20 W

audio amplifiers utilizing complementary

symmetry circuity

PINNING(see Fig.2)

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current (DC)

CONDITIONS

Open emitter

VALUE

-40

UNIT

ꢀ

Open base

-40

Open collector

-4

I_CM

-8

I_B

-2

P_D

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

150

-65~150

T_j

ꢀ

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal resistance junction to case

3.12

ꢀ/W

R_{th j-c}

12 3

中文翻译

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