Datasheet > MJE371

MJE371

更新时间： 2024-11-21 10:55:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	93K
描述
isc Silicon PNP Power Transistor

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MJE371 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

MJE371

DESCRIPTION

·Collector–Emitter Sustaining Voltage—

: V_CEO(SUS)= -40V

·DC Current Gain—

: h_FE= 40(Min) @ I_C= -1A

·Complement to Type MJE521

APPLICATIONS

·Designed for use in general-purpose amplifier and switching

circuits.

·Recommended for use in 5~20 Watt audio amplifiers utilizing

complementary symmetry circuitry.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-peak

Base Current

VALUE

-40

UNIT

-40

-4

I_CM

-8

I_B

-2

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

-65~150

T_i

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

3.12

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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