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MJE350 PDF预览

MJE350

更新时间: 2024-10-31 22:46:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关局域网
页数 文件大小 规格书
4页 40K
描述
High Voltage General Purpose Applications

MJE350 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.15外壳连接:ISOLATED
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):20 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

MJE350 数据手册

 浏览型号MJE350的Datasheet PDF文件第2页浏览型号MJE350的Datasheet PDF文件第3页浏览型号MJE350的Datasheet PDF文件第4页 
MJE350  
High Voltage General Purpose Applications  
High Collector-Emitter Breakdown Voltage  
Suitable for Transformer  
Complement to MJE340  
TO-126  
1. Emitter 2.Collector 3.Base  
1
..PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 300  
- 300  
- 5  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
CEO  
EBO  
V
V
I
- 500  
20  
mA  
W
°C  
°C  
C
P
Collector Dissipation (T =25°C)  
C
C
T
Junction Temperature  
Storage Temperature  
150  
J
T
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Max. Units  
BV  
I
= - 1mA, I = 0  
-300  
V
CEO  
CBO  
C
B
I
V
V
V
= - 300V, I = 0  
-100  
-100  
240  
µA  
µA  
CB  
BE  
CE  
E
I
= - 3V, I = 0  
C
EBO  
h
= - 10V, I = - 50mA  
30  
FE  
C
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  

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