是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.15 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 30 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE350G | ONSEMI |
获取价格 |
Plastic Medium Power PNP Silicon Transistor | |
MJE350STU | ONSEMI |
获取价格 |
0.5 A, 300 V PNP Bipolar Power Transistor | |
MJE370 | CENTRAL |
获取价格 |
SILICON COMPLEMENTARY POWER TRANSISTORS | |
MJE370 | NJSEMI |
获取价格 |
BJT | |
MJE370LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
MJE371 | SAVANTIC |
获取价格 |
Silicon PNP Power Transistors | |
MJE371 | ISC |
获取价格 |
isc Silicon PNP Power Transistor | |
MJE371 | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
MJE371 | MOTOROLA |
获取价格 |
4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS | |
MJE371 | ONSEMI |
获取价格 |
POWER TRANSISTOR PNP SILICON |