Datasheet > MJE4343

MJE4343

更新时间： 2024-11-02 10:55:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
3页	43K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

技术参数
数据手册

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MJE4343 技术参数

生命周期：	Contact Manufacturer	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.73
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	16 A
基于收集器的最大容量：	800 pF	集电极-发射极最大电压：	160 V
配置：	SINGLE	最小直流电流增益 (hFE)：	8
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
最大功率耗散 (Abs)：	125 W	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	1 MHz	VCEsat-Max：	3.5 V
Base Number Matches：	1

MJE4343 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE4340/4341/4342/4343

DESCRIPTION

·With TO-3PN package

·Respectively complement to type

MJE4350/4351/4352/4353

·DC current gain h_FE=8(Min)@I_C=16A

APPLICATIONS

·For use in high power audio amplifier and

switching regulator circuits

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Fig.1 simplified outline (TO-3PN) and symbol

Emitter

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

MJE4340

CONDITIONS

VALUE

100

120

140

160

100

120

140

160

UNIT

MJE4341

MJE4342

MJE4343

MJE4340

MJE4341

MJE4342

MJE4343

Collector-base

voltage

V_CBO

Open emitter

Collector-emitter

voltage

V_CEO

Open base

V_EBO

I_C

I_CM

I_B

Emitter-base voltage

Collector current

Open collector

Collector current-peak

Base current

P_C

T_j

Collector power dissipation

Junction temperature

Storage temperature

T_C=25℃

125

150

-65~150

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance junction to case

1.0

℃/W

12 3

中文翻译

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MJE4351	MOSPEC	获取价格	POWER TRANSISTORS(16A,100-160V,125W)
MJE4351	ISC	获取价格	Silicon PNP Power Transistors
MJE4351	SAVANTIC	获取价格	Silicon PNP Power Transistors
MJE4352	ISC	获取价格	Silicon PNP Power Transistors
MJE4352	SAVANTIC	获取价格	Silicon PNP Power Transistors