Datasheet > MJE4343_06

MJE4343_06

更新时间： 2024-11-02 10:55:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	143K
描述
High?Voltage High Power Transistors

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MJE4343_06 数据手册

ON Semiconductort

NPN

MJE4343

PNP

MJE4353

High−Voltage ꢀ High Power

Transistors

. . . designed for use in high power audio amplifier applications and

high voltage switching regulator circuits.

• High Collector−Emitter Sustaining Voltage —

16 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

NPN

PNP

= 160 Vdc — MJE4343 MJE4353

CEO(sus)

• High DC Current Gain — @ I = 8.0 Adc h = 35 (Typ)

160 VOLTS

• Low Collector−Emitter Saturation Voltage —

CE(sat)

= 2.0 Vdc (Max) @ I

= 8.0 Adc

w These devices are available in Pb−free package(s). Specifications herein

apply to both standard and Pb−free devices. Please see our website at

www.onsemi.com for specific Pb−free orderable part numbers, or

contact your local ON Semiconductor sales office or representative.

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Max

160

7.0

Unit

Vdc

Adc

CEO

CASE 340D−02

TO−218 TYPE

Collector Current — Continuous

Peak (1)

Base Current — Continuous

5.0

125

Adc

Watts

Total Power Dissipation @ T = 25_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

1.0

_C/W

(1) Pulse Test: Pulse Width v 5.0 μs, Duty Cycle w 10%.

3.5

3.0

2.5

2.0

1.5

1.0

0.5

100

125

150

T , AMBIENT TEMPERATURE (°C)

Figure 1. Power Derating

Reference: Ambient Temperature

Publication Order Number:

March, 2006 − Rev. 4

MJE4343/D

12 3 4 5 6 7

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