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MJE4350 PDF预览

MJE4350

更新时间: 2024-11-09 10:55:47
品牌 Logo 应用领域
SAVANTIC 晶体晶体管
页数 文件大小 规格书
3页 139K
描述
Silicon PNP Power Transistors

MJE4350 数据手册

 浏览型号MJE4350的Datasheet PDF文件第2页浏览型号MJE4350的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
MJE4350/4351/4352/4353  
DESCRIPTION  
·With TO-3PN package  
·Respectively complement to type  
MJE4340/4341/4342/4343  
·DC current gain hFE=8(Min)@IC=16A  
APPLICATIONS  
·For use in high power audio amplifier  
and switching regulator circuits  
PINNING  
PIN  
DESCRIPTION  
1
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
-100  
-120  
-140  
-160  
-100  
-120  
-140  
-160  
-7  
UNIT  
MJE4350  
MJE4351  
MJE4352  
MJE4353  
MJE4350  
MJE4351  
MJE4352  
MJE4353  
Collector-base  
voltage  
VCBO  
Open emitter  
V
Collector-emitter  
voltage  
VCEO  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
A
A
W
-16  
Collector current-peak  
Base current  
-20  
-5  
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
125  
150  
-65~150  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal resistance junction to case  
1.0  
/W  
Rth j-c  

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