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MJE4340 PDF预览

MJE4340

更新时间: 2024-11-06 10:55:47
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 43K
描述
Silicon NPN Power Transistors

MJE4340 技术参数

生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.82
外壳连接:COLLECTOR最大集电极电流 (IC):16 A
基于收集器的最大容量:800 pF集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):8
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):125 W表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):1 MHzVCEsat-Max:3.5 V

MJE4340 数据手册

 浏览型号MJE4340的Datasheet PDF文件第2页浏览型号MJE4340的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE4340/4341/4342/4343  
DESCRIPTION  
·With TO-3PN package  
·Respectively complement to type  
MJE4350/4351/4352/4353  
·DC current gain hFE=8(Min)@IC=16A  
APPLICATIONS  
·For use in high power audio amplifier and  
switching regulator circuits  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-3PN) and symbol  
3
Emitter  
Absolute maximum ratings(Ta=)  
SYMBOL  
PARAMETER  
MJE4340  
CONDITIONS  
VALUE  
100  
120  
140  
160  
100  
120  
140  
160  
7
UNIT  
MJE4341  
MJE4342  
MJE4343  
MJE4340  
MJE4341  
MJE4342  
MJE4343  
Collector-base  
voltage  
VCBO  
Open emitter  
V
Collector-emitter  
voltage  
VCEO  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
16  
Collector current-peak  
Base current  
20  
A
5
A
PC  
Tj  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25  
125  
150  
-65~150  
W
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance junction to case  
1.0  
/W  

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