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MJE371G PDF预览

MJE371G

更新时间: 2024-11-02 10:55:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
3页 62K
描述
Plastic Medium−Power PNP Silicon Transistor

MJE371G 数据手册

 浏览型号MJE371G的Datasheet PDF文件第2页浏览型号MJE371G的Datasheet PDF文件第3页 
MJE371  
Plastic Medium−Power  
PNP Silicon Transistor  
This device is designed for use in general−purpose amplifier and  
switching circuits. Recommended for use in 5 to 20 Watt audio  
amplifiers utilizing complementary symmetry circuitry.  
http://onsemi.com  
Features  
DC Current Gain − h = 40 (Min) @ I  
FE  
C
4 AMPERES  
POWER TRANSISTOR  
PNP SILICON  
= 1.0 Adc  
MJE371 is Complementary to NPN MJE521  
Pb−Free Package is Available*  
40 VOLTS, 40 WATTS  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
40  
CB  
EB  
V
4.0  
TO−225  
CASE 77  
STYLE 1  
Collector Current − Continuous  
− Peak  
I
4.0  
8.0  
C
3
2
1
Base Current  
− Continuous  
I
2.0  
Adc  
B
Total Power Dissipation @ T = 25_C  
P
40  
320  
W
C
D
Derate above 25_C  
mW/_C  
_C  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
J
stg  
MARKING DIAGRAM  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
q
3.12  
_C/W  
JC  
YWW  
JE371G  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Y
= Year  
WW  
= Work Week  
Characteristic  
Symbol Min Max  
Unit  
JE371 = Device Code  
G
OFF CHARACTERISTICS  
= Pb−Free Package  
Collector−Emitter Sustaining Voltage  
V
40  
Vdc  
mAdc  
mAdc  
CEO(sus)  
(I = 100 mAdc, I = 0) (Note 1)  
C
B
ORDERING INFORMATION  
Collector−Base Cutoff Current  
(V = 40 Vdc, I = 0)  
I
I
100  
100  
CBO  
EBO  
CB  
E
Device  
Package  
Shipping  
Emitter−Base Cutoff Current  
(V = 4.0 Vdc, I = 0)  
MJE371  
TO−225  
500 Units/Box  
500 Units/Box  
EB  
C
ON CHARACTERISTICS  
TO−225  
MJE371G  
(Pb−Free)  
DC Current Gain (Note 1)  
h
FE  
40  
(I = 1.0 Adc, V = 1.0 Vdc)  
C
CE  
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 6  
MJE371/D  
 

MJE371G 替代型号

型号 品牌 替代类型 描述 数据表
MJE371 ONSEMI

类似代替

POWER TRANSISTOR PNP SILICON
MJE371 MOTOROLA

类似代替

4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS
BD436 STMICROELECTRONICS

功能相似

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