MJE371G

更新时间： 2024-11-21 10:55:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
3页	62K
描述
Plastic Medium−Power PNP Silicon Transistor

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

MJE371G 数据手册

MJE371

Plastic Medium−Power

PNP Silicon Transistor

This device is designed for use in general−purpose amplifier and

switching circuits. Recommended for use in 5 to 20 Watt audio

amplifiers utilizing complementary symmetry circuitry.

http://onsemi.com

Features

• DC Current Gain − h = 40 (Min) @ I

4 AMPERES

POWER TRANSISTOR

PNP SILICON

= 1.0 Adc

• MJE371 is Complementary to NPN MJE521

• Pb−Free Package is Available*

40 VOLTS, 40 WATTS

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

Unit

Vdc

Adc

CEO

4.0

TO−225

CASE 77

STYLE 1

Collector Current − Continuous

− Peak

4.0

8.0

Base Current

− Continuous

2.0

Adc

Total Power Dissipation @ T = 25_C

320

Derate above 25_C

mW/_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

MARKING DIAGRAM

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

3.12

_C/W

YWW

JE371G

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

= Year

= Work Week

Characteristic

Symbol Min Max

Unit

JE371 = Device Code

OFF CHARACTERISTICS

= Pb−Free Package

Collector−Emitter Sustaining Voltage

−

Vdc

mAdc

CEO(sus)

(I = 100 mAdc, I = 0) (Note 1)

ORDERING INFORMATION

Collector−Base Cutoff Current

(V = 40 Vdc, I = 0)

100

CBO

EBO

Device

Package

Shipping

Emitter−Base Cutoff Current

(V = 4.0 Vdc, I = 0)

−

MJE371

TO−225

500 Units/Box

ON CHARACTERISTICS

TO−225

MJE371G

(Pb−Free)

DC Current Gain (Note 1)

−

(I = 1.0 Adc, V = 1.0 Vdc)

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 6

MJE371/D

12 3

中文翻译

下载PDF

MJE371G 替代型号

型号	品牌	替代类型	描述	数据表
MJE371	ONSEMI	类似代替	POWER TRANSISTOR PNP SILICON
MJE371	MOTOROLA	类似代替	4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS
BD436	STMICROELECTRONICS	功能相似	COMPLEMENTARY SILICON POWER TRANSISTORS

与MJE371G相关器件

型号	品牌	获取价格	描述	数据表
MJE4340	ISC	获取价格	Silicon NPN Power Transistors
MJE4340	MOSPEC	获取价格	POWER TRANSISTORS(16A,100-160V,125W)
MJE4341	MOSPEC	获取价格	POWER TRANSISTORS(16A,100-160V,125W)
MJE4341	ISC	获取价格	Silicon NPN Power Transistors
MJE4342	MOSPEC	获取价格	POWER TRANSISTORS(16A,100-160V,125W)
MJE4342	ISC	获取价格	Silicon NPN Power Transistors
MJE4342	MOTOROLA	获取价格	16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS
MJE4343	ONSEMI	获取价格	POWER TRANSISTORS COMPLEMENTARY SILICON
MJE4343	MOTOROLA	获取价格	16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 140-160 VOLTS
MJE4343	MOSPEC	获取价格	POWER TRANSISTORS(16A,100-160V,125W)

与MJE371G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE371G

MJE371G 数据手册

MJE371G 替代型号

与MJE371G相关器件

与MJE371G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE371G

MJE371G 数据手册

MJE371G 替代型号

与MJE371G相关器件

与MJE371G相关文章

您还可以找

您在本页遇到什么问题？