是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.2 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 15 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE344_06 | ONSEMI |
获取价格 |
Plastic NPN Silicon Medium?Power Transistor | |
MJE3440 | STMICROELECTRONICS |
获取价格 |
SILICON NPN TRANSISTOR | |
MJE3440 | CENTRAL |
获取价格 |
250V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | |
MJE3440 | NJSEMI |
获取价格 |
Trans GP BJT NPN 250V 0.3A 3-Pin(3+Tab) SOT-32 | |
MJE3440LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 0.3A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
MJE344G | ONSEMI |
获取价格 |
Plastic NPN Silicon Medium?Power Transistor | |
MJE350 | MOTOROLA |
获取价格 |
0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS | |
MJE350 | ONSEMI |
获取价格 |
POWER TRANSISTOR PNP SILICON | |
MJE350 | FAIRCHILD |
获取价格 |
High Voltage General Purpose Applications | |
MJE350 | STMICROELECTRONICS |
获取价格 |
COMPLEMETARY SILICON POWER TRANSISTORS |