Datasheet > MJE344_06

MJE344_06

更新时间： 2024-11-05 10:55:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
3页	63K
描述
Plastic NPN Silicon Medium?Power Transistor

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MJE344_06 数据手册

MJE344

Plastic NPN Silicon

Medium−Power Transistor

This device is useful for medium voltage applications requiring high

f such as converters and extended range amplifiers.

Features

http://onsemi.com

• Pb−Free Package is Available*

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter Base Voltage

Collector Current − Continuous

Base Current

Symbol

Value

200

5.0

Unit

Vdc

150−200 VOLTS, 20 WATTS

CEO

Vdc

500

250

mAdc

Total Power Dissipation @ T = 25_C

0.16

TO−225

CASE 77

STYLE 1

Derate above 25_C

mW/_C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Case

6.25

_C/W

MARKING DIAGRAM

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

YWW

JE344G

= Year

= Work Week

JE344 = Device Code

= Pb−Free Package

ORDERING INFORMATION

Device

Package

Shipping

MJE344

TO−225

500 Units/Box

TO−225

MJE344G

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 2

MJE344/D

12 3

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