MJE344

更新时间： 2024-11-20 22:33:07

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管
页数	文件大小	规格书
4页	133K
描述
0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJE344 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.2
Is Samacsys：	N	最大集电极电流 (IC)：	0.5 A
基于收集器的最大容量：	15 pF	集电极-发射极最大电压：	200 V
配置：	SINGLE	最小直流电流增益 (hFE)：	25
JEDEC-95代码：	TO-225AA	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	NPN
功耗环境最大值：	20 W	最大功率耗散 (Abs)：	20 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	15 MHz	VCEsat-Max：	1 V
Base Number Matches：	1

MJE344 数据手册

Order this document

by MJE341/D

SEMICONDUCTOR TECHNICAL DATA

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

. . . useful for medium voltage applications requiring high f such as converters and

extended range amplifiers.

150–200 VOLTS

20 WATTS

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

Symbol

MJE341

150

MJE344

200

Unit

Vdc

CEO

175

200

Vdc

3.0

5.0

Vdc

500

mAdc

250

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.16

Watts

W/ C

CASE 77–08

TO–225AA TYPE

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

6.25

C/W

1.0

0.5

500 µs

ALL

1.0 ms

ALL

0.2

0.1

T = 150°C

0.05

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

0.02

0.01

THERMAL LIMIT T = 25°C

100

200

300

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

The data of Figure 1 is based on T

= 150 C; T is vari-

J(pk)

able depending on conditions. Second breakdown pulse lim-

its are valid for duty cycles to 10% provided T 150 C.

down. Safe operating area curves indicate I – V

limits of

J(pk)

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion then the curves indicate.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less then the limitations

imposed by second breakdown.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

下载PDF

与MJE344相关器件

型号	品牌	获取价格	描述	数据表
MJE344_06	ONSEMI	获取价格	Plastic NPN Silicon Medium?Power Transistor
MJE3440	STMICROELECTRONICS	获取价格	SILICON NPN TRANSISTOR
MJE3440	CENTRAL	获取价格	250V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
MJE3440	NJSEMI	获取价格	Trans GP BJT NPN 250V 0.3A 3-Pin(3+Tab) SOT-32
MJE3440LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 0.3A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
MJE344G	ONSEMI	获取价格	Plastic NPN Silicon Medium?Power Transistor
MJE350	MOTOROLA	获取价格	0.5 AMPERE POWER TRANSISTOR PNP SILICON 300 VOLTS 20 WATTS
MJE350	ONSEMI	获取价格	POWER TRANSISTOR PNP SILICON
MJE350	FAIRCHILD	获取价格	High Voltage General Purpose Applications
MJE350	STMICROELECTRONICS	获取价格	COMPLEMETARY SILICON POWER TRANSISTORS

与MJE344相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

31
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

22
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

51
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

50

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE344

MJE344 技术参数

MJE344 数据手册

与MJE344相关器件

与MJE344相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE344

MJE344 技术参数

MJE344 数据手册

与MJE344相关器件

与MJE344相关文章

您还可以找

您在本页遇到什么问题？