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MJE3439 PDF预览

MJE3439

更新时间: 2024-11-22 14:55:59
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 316K
描述
350V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

MJE3439 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.23最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:350 V配置:SINGLE
最小直流电流增益 (hFE):50JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):15 MHz
Base Number Matches:1

MJE3439 数据手册

 浏览型号MJE3439的Datasheet PDF文件第2页浏览型号MJE3439的Datasheet PDF文件第3页 
MJE3439  
www.centralsemi.com  
SILICON  
NPN POWER TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MJE3439 is a  
silicon NPN power transistor designed for amplifier  
applications requiring high f .  
T
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C unless otherwise noted)  
A
SYMBOL  
UNITS  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
450  
350  
V
CBO  
CEO  
EBO  
V
V
V
V
5.0  
Continuous Collector Current  
Continuous Base Current  
I
0.3  
A
C
I
150  
mA  
W
B
Power Dissipation (T =25°C)  
C
P
15  
D
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
8.33  
°C  
J
stg  
Thermal Resistance  
Θ
°C/W  
JC  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
I
V
V
V
V
=350V  
=450V, V  
=300V  
=5.0V  
20  
µA  
CBO  
CEX  
CEO  
EBO  
CB  
CE  
CE  
EB  
=1.5V  
500  
20  
µA  
µA  
µA  
V
BE(OFF)  
20  
BV  
I =5.0mA  
350  
CEO  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
V
V
V
I =50mA, I =4.0mA  
0.5  
1.3  
0.8  
V
C
B
I =50mA, I =4.0mA  
V
C
B
V
=10V, I =50mA  
V
CE  
CE  
CE  
CE  
CB  
C
h
h
V
V
V
V
=10V, I =2.0mA  
30  
15  
15  
C
=10V, I =20mA  
200  
10  
FE  
C
f
=10V, I =50mA, f=5.0MHz  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
ob  
E
R0 (23-August 2021)  

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