MJE3439

更新时间： 2024-11-20 22:33:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	103K
描述
POWER TRANSISTOR NPN SILICON

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中文翻译

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数据手册
替代型号

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MJE3439 数据手册

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SEMICONDUCTOR TECHNICAL DATA

0.3 AMPERE

POWER TRANSISTOR

NPN SILICON

350 VOLTS

. . . designed for use in line–operated equipment requiring high f .

•

High DC Current Gain

= 40–160 @ I = 20 mAdc

15 WATTS

Current Gain Bandwidth Product —

= 15 MHz (Min) @ I = 10 mAdc

Low Output Capacitance

= 10 pF (Max) @ f = 1.0 MHz

MAXIMUM RATINGS

Rating

Symbol

Value

350

450

5.0

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

CEO

CASE 77–08

TO–225AA TYPE

Vdc

0.3

Adc

150

mAdc

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.12

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

8.33

C/W

8.0

6.0

4.0

2.0

100

120

140

160

, CASE TEMPERATURE (°C)

Figure 1. Power–Temperature Derating Curve

REV 7

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12 3 4

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MJE3439 替代型号

型号	品牌	替代类型	描述	数据表
MJE3439	CENTRAL	功能相似	350V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
MJE3439G	ONSEMI	功能相似	NPN Silicon High−Voltage Power Transistor

与MJE3439相关器件

型号	品牌	获取价格	描述	数据表
MJE3439G	ONSEMI	获取价格	NPN Silicon High−Voltage Power Transistor
MJE3439LEADFREE	CENTRAL	获取价格	暂无描述
MJE344	MOTOROLA	获取价格	0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS
MJE344	ONSEMI	获取价格	POWER TRANSISTORS NPN SILICON
MJE344	CENTRAL	获取价格	200V,500mA,20W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
MJE344	NJSEMI	获取价格	Trans GP BJT NPN 200V 0.5A 3-Pin TO-126
MJE344_06	ONSEMI	获取价格	Plastic NPN Silicon Medium?Power Transistor
MJE3440	STMICROELECTRONICS	获取价格	SILICON NPN TRANSISTOR
MJE3440	CENTRAL	获取价格	250V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
MJE3440	NJSEMI	获取价格	Trans GP BJT NPN 250V 0.3A 3-Pin(3+Tab) SOT-32