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MJE340STU PDF预览

MJE340STU

更新时间： 2024-09-27 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网PC晶体管功率双极晶体管
页数 文件大小 规格书
4页 68K
描述
中等功率 NPN 双极功率晶体管

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中文翻译

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MJE340STU 技术参数

是否无铅：不含铅生命周期：End Of Life
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95Factory Lead Time：1 week
风险等级：5.39Samacsys Confidence：3
Samacsys Status：ReleasedSamacsys PartID：712
Samacsys Pin Count：3Samacsys Part Category：Transistor BJT NPN
Samacsys Package Category：Transistor Outline, VerticalSamacsys Footprint Name：MJE340STU-1
Samacsys Released Date：2015-11-03 12:30:39Is Samacsys：N
最大集电极电流 (IC)：0.5 A集电极-发射极最大电压：300 V
配置：SINGLE最小直流电流增益 (hFE)：30
JEDEC-95代码：TO-126JESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：NPN最大功率耗散 (Abs)：20 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管元件材料：SILICON
Base Number Matches：1

MJE340STU 数据手册

 浏览型号MJE340STU的Datasheet PDF文件第2页浏览型号MJE340STU的Datasheet PDF文件第3页浏览型号MJE340STU的Datasheet PDF文件第4页 
MJE340  
Plastic Medium−Power  
NPN Silicon Transistor  
This device is useful for high−voltage general purpose applications.  
Features  
http://onsemi.com  
• Suitable for Transformerless, Line−Operated Equipment  
• Thermopad Construction Provides High Power Dissipation Rating  
0.5 AMPERE  
POWER TRANSISTOR  
NPN SILICON  
for High Reliability  
• Pb−Free Package is Available*  
300 VOLTS, 20 WATTS  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Symbol  
Value  
300  
Unit  
Vdc  
V
CEO  
V
3.0  
Vdc  
EB  
Collector Current − Continuous  
I
500  
mAdc  
C
Total Power Dissipation @ T = 25_C  
P
20  
0.16  
W
C
D
TO−225  
CASE 77  
STYLE 1  
Derate above 25_C  
mW/_C  
_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
stg  
3
2
1
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction−to−Case  
q
6.25  
_C/W  
JC  
MARKING DIAGRAM  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
YWW  
JE340G  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol Min Max  
Unit  
OFF CHARACTERISTICS  
Y
WW  
= Year  
= Work Week  
Collector−Emitter Sustaining Voltage  
V
300  
−
−
Vdc  
mAdc  
mAdc  
CEO(sus)  
(I = 1.0 mAdc, I = 0)  
C
B
JE340 = Device Code  
G
= Pb−Free Package  
Collector Cutoff Current  
(V = 300 Vdc, I = 0)  
I
I
100  
100  
CBO  
EBO  
CB  
E
Emitter Cutoff Current  
(V = 3.0 Vdc, I = 0)  
−
ORDERING INFORMATION  
EB  
C
ON CHARACTERISTICS  
Device  
Package  
Shipping  
DC Current Gain  
(I = 50 mAdc, V = 10 Vdc)  
C
h
FE  
30  
240  
−
MJE340  
TO−225  
500 Units/Box  
500 Units/Box  
CE  
TO−225  
MJE340G  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 11  
MJE340/D  
1234

中文翻译

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MJE340STU 替代型号

型号 品牌 替代类型 描述 数据表
KSE340STU ONSEMI

类似代替

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MJE180STU ONSEMI

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 NPN Epitaxial Silicon Transistor, 1920-TUBE
MJE340G ONSEMI

类似代替

 Plastic Medium−Power NPN Silicon Transistor

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