MJE340T

更新时间： 2024-11-21 12:20:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	244K
描述
isc Silicon NPN Power Transistor

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MJE340T 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJE340T

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: V_CEO(SUS)= 300 V(Min)

·DC Current Gain-

: h_FE= 100(Min) @ I_C= 50mA

·Low Collector Saturation Voltage-

: V_CE(sat)= 1.0V(Max.)@ I_C= 50mA

APPLICATIONS

·Designed for high voltage and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

300

UNIT

300

Collector Current-Continuous

0.5

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

T_i

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

6.25

UNIT

Thermal Resistance,Junction to Case

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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