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MJE180STU PDF预览

MJE180STU

更新时间： 2024-11-01 12:59:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 83K
描述
NPN Epitaxial Silicon Transistor, 1920-TUBE

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中文翻译

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MJE180STU 技术参数

是否无铅： 不含铅生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.29.00.95Factory Lead Time：1 week
风险等级：0.96最大集电极电流 (IC)：3 A
集电极-发射极最大电压：40 V配置：SINGLE
最小直流电流增益 (hFE)：12JEDEC-95代码：TO-126
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：1.5 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：50 MHzBase Number Matches：1

MJE180STU 数据手册

 浏览型号MJE180STU的Datasheet PDF文件第2页浏览型号MJE180STU的Datasheet PDF文件第3页浏览型号MJE180STU的Datasheet PDF文件第4页浏览型号MJE180STU的Datasheet PDF文件第5页浏览型号MJE180STU的Datasheet PDF文件第6页 
MJE170, MJE171, MJE172  
(PNP), MJE180, MJE181,  
MJE182 (NPN)  
Preferred Device  
Complementary Plastic  
Silicon Power Transistors  
http://onsemi.com  
The MJE170/180 series is designed for low power audio amplifier  
and low current, high speed switching applications.  
3 AMPERES  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
40 − 60 − 80 VOLTS  
12.5 WATTS  
Features  
• Collector−Emitter Sustaining Voltage −  
V
= 40 Vdc − MJE170, MJE180  
= 60 Vdc − MJE171, MJE181  
= 80 Vdc − MJE172, MJE182  
CEO(sus)  
• DC Current Gain −  
h
= 30 (Min) @ I = 0.5 Adc  
FE  
C
= 12 (Min) @ I = 1.5 Adc  
C
• Current−Gain − Bandwidth Product −  
= 50 MHz (Min) @ I = 100 mAdc  
f
T
C
• Annular Construction for Low Leakages −  
TO−225AA  
CASE 77−09  
STYLE 1  
I
= 100 nA (Max) @ Rated V  
CB  
CBO  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Machine Model, C  
Human Body Model, 3B  
3
2
1
• Pb−Free Packages are Available*  
MARKING DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector−Base Voltage  
MJE170, MJE180  
MJE171, MJE181  
MJE172, MJE182  
V
Vdc  
CB  
YWW  
JE1xxG  
60  
80  
100  
Collector−Emitter Voltage  
MJE170, MJE180  
V
Vdc  
CEO  
40  
60  
80  
MJE171, MJE181  
MJE172, MJE182  
Y
= Year  
WW  
= Work Week  
Emitter−Base Voltage  
V
7.0  
Vdc  
Adc  
EB  
JE1xx = Specific Device Code  
x = 70, 71, 72, 80, 81, or 82  
G
Collector Current − Continuous  
− Peak  
I
3.0  
6.0  
C
= Pb−Free Package  
Base Current  
I
1.0  
Adc  
B
Total Power Dissipation @ T = 25_C  
P
1.5  
0.012  
W
C
D
D
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Derate above 25_C  
W/_C  
Total Power Dissipation @ T = 25_C  
P
12.5  
0.1  
W
A
Derate above 25_C  
W/_C  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
_C  
stg  
Preferred devices are recommended choices for future use  
and best overall value.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not normal  
operating conditions) and are not valid simultaneously. If these limits are exceeded,  
device functional operation is not implied, damage may occur and reliability may be  
affected.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 9  
MJE171/D  
123456

中文翻译

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MJE180STU 替代型号

型号 品牌 替代类型 描述 数据表
BD13816STU ONSEMI

类似代替

 1.5 A, 60 V PNP Bipolar Power Junctions Transistor
MJE340STU ONSEMI

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 中等功率 NPN 双极功率晶体管
MJE180G ONSEMI

类似代替

 Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS

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