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MJE182

更新时间： 2024-11-01 22:46:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管开关局域网
页数 文件大小 规格书
4页 175K
描述
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

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MJE182 数据手册

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Order this document  
by MJE171/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for low power audio amplifier and low current, high speed switching  
applications.  
•
Collector–Emitter Sustaining Voltage —  
V
V
= 60 Vdc — MJE171, MJE181  
= 80 Vdc — MJE172, MJE182  
CEO(sus)  
CEO(sus)  
•
DC Current Gain —  
h
h
= 30 (Min) @ I = 0.5 Adc  
FE  
FE  
C
*Motorola Preferred Device  
= 12 (Min) @ I = 1.5 Adc  
C
•
•
Current–Gain — Bandwidth Product —  
3 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
f
T
= 50 MHz (Min) @ I = 100 mAdc  
C
Annular Construction for Low Leakages —  
= 100 nA (Max) @ Rated V  
I
CBO  
CB  
60–80 VOLTS  
MAXIMUM RATINGS  
12.5 WATTS  
MJE171  
MJE181  
MJE172  
MJE182  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
80  
60  
100  
80  
CB  
V
CEO  
V
7.0  
EB  
Collector Current — Continuous  
Peak  
I
C
3.0  
6.0  
Base Current  
I
1.0  
1.5  
0.012  
Adc  
B
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
Watts  
W/ C  
D
CASE 77–08  
TO–225AA  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
12.5  
0.1  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
10  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
θ
θ
JC  
JA  
83.4  
T
T
C
A
2.8  
14  
2.4 12  
2.0 10  
1.6 8.0  
1.2 6.0  
0.8 4.0  
0.4 2.0  
T
C
T
A
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (  
°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1995
1234

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MJE182 替代型号

型号 品牌 替代类型 描述 数据表
MJE182LEADFREE CENTRAL

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