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MJE18204AF

更新时间： 2024-11-03 04:50:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
67页 533K
描述
5A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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MJE18204AF 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
5 AMPERES  
1200 VOLTS  
35 and 75 WATTS  
The MJE/MJF18204 have an application specific state–of–the–art die dedicated to  
the electronic ballast (“light ballast”) and power supply applications.  
•
Improved Global Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for Fast Turn–Off (No Current Tail)  
Full Characterization at 125 C  
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric  
Distributions  
•
•
•
Two Package Choices: Standard TO–220 or Isolated TO–220  
MAXIMUM RATINGS  
Rating  
Symbol MJE18204 MJF18204  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
V
600  
1200  
1200  
10  
CEO  
CBO  
V
V
CES  
EBO  
Collector Current — Continuous  
— Peak (1)  
I
5
10  
CASE 221A–06  
TO–220AB  
C
I
CM  
Base Current — Continuous  
— Peak (1)  
I
2
4
Adc  
B
I
BM  
RMS Isolation Voltage (2)  
(for 1 sec, R.H. ≤ 30%)  
Per Figure 22  
Per Figure 23  
Per Figure 24  
V
V
V
4500  
3500  
1500  
Volts  
ISOL1  
ISOL2  
ISOL3  
T
C
= 25°C  
*Total Device Dissipation @ T = 25°C  
*Derate above 25 C  
P
D
75  
0.6  
35  
0.28  
Watt  
W/ C  
C
Operating and Storage Temperature  
T , T  
J stg  
–65 to 150  
C
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18204 MJF18204  
Unit  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
1.65  
62.5  
3.55  
62.5  
C/W  
CASE 221D–02  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
C
TO–220 FULLPACK  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
3–759  
Motorola Bipolar Power Transistor Device Data  
1234567...67

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