MJE200

更新时间： 2024-11-02 10:55:47

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管放大器局域网
页数	文件大小	规格书
2页	91K
描述
isc Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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MJE200 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.55
Is Samacsys：	N	Base Number Matches：	1

MJE200 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJE200

DESCRIPTION

·Low Collector–Emitter Saturation Voltage-

·DC Current Gain-Bandwidth Product

·High DC Current Gain

·Complement to MJE210

APPLICATIONS

·Designed for low voltage, low-power, high-gain audio

amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Base Current

VALUE

UNIT

I_B

Collector Power Dissipation

T_C=25℃

P_C

℃

Junction Temperature

150

T_i

Storage Temperature Range

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

8.34

83.4

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

中文翻译

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