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MJE200TSTU PDF预览

MJE200TSTU

更新时间: 2024-11-02 19:48:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网晶体管
页数 文件大小 规格书
4页 41K
描述
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin,

MJE200TSTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.68
最大集电极电流 (IC):5 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):65 MHzBase Number Matches:1

MJE200TSTU 数据手册

 浏览型号MJE200TSTU的Datasheet PDF文件第2页浏览型号MJE200TSTU的Datasheet PDF文件第3页浏览型号MJE200TSTU的Datasheet PDF文件第4页 
MJE200  
Feature  
Low Collector-Emitter Saturation Voltage  
High Current Gain Bandwidth Product : f =65MHz @ I =100mA (Min.)  
Complement to MJE210  
T
C
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter- Base Voltage  
Collector Current  
40  
V
V
CBO  
CEO  
EBO  
25  
V
8
V
I
5
15  
A
C
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
Junction Temperature  
Storage Temperature  
150  
J
T
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max. Units  
BV  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
I =10mA, I =0  
25  
V
CEO  
CBO  
C
B
I
V
=40V, I =0  
100  
100  
nA  
µA  
CB  
CB  
E
V
=40V, I =0 @ T =125°C  
E
J
I
Emitter Cut-off Current  
DC Current Gain  
V
=8V, I =0  
100  
nA  
EBO  
BE  
C
h
V
V
V
=1V, I =500mA  
70  
45  
10  
FE  
CE  
CE  
CE  
C
=1V, I =2A  
180  
C
=2V, I =5A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I =500mA, I =50mA  
0.3  
0.75  
1.8  
V
V
V
CE  
C
B
I =2A, I =200mA  
C
C
I =5A, I =1A  
C
B
V
V
(sat)  
(on)  
Base- Emitter Saturation Voltage  
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =5A, I =1A  
2.5  
1.6  
V
V
BE  
BE  
C
B
V
=1V, I =2A  
C
CE  
CE  
CB  
f
V
V
=10V, I =100mA  
65  
MHz  
pF  
T
C
C
=10V, I =0, f=0.1MHz  
80  
ob  
E
©2001 Fairchild Semiconductor Corporation  
Rev. A2, June 2001  

MJE200TSTU 替代型号

型号 品牌 替代类型 描述 数据表
MJE200STU FAIRCHILD

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Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/

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