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MJE210T

更新时间： 2024-11-02 10:55:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 116K
描述
Complementary Silicon Power Plastic Transistors

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中文翻译

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MJE210T 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-225包装说明：PLASTIC, CASE 77-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.12
最大集电极电流 (IC)：5 A集电极-发射极最大电压：40 V
配置：SINGLE最小直流电流增益 (hFE)：10
JEDEC-95代码：TO-225JESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP最大功率耗散 (Abs)：1.5 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：65 MHz
Base Number Matches：1

MJE210T 数据手册

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Operating and Storage Junction  
Temperature Range  
T , T  
J
                                                                                                                      
65 to  
                                                                                                                                
150  
MJE200 - NPN,  
MJE210 - PNP  
Preferred Device  
Complementary Silicon  
Power Plastic Transistors  
These devices are ꢀdesigned for low voltage, low-power, high-gain  
audio amplifier applications.  
http://onsemi.com  
Features  
5.0 AMPERES  
•ꢁCollector-Emitter Sustaining Voltage -  
CEO(sus)  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
25 VOLTS, 15 WATTS  
V
= 25 Vdc (Min) @ I = 10 mAdc  
C
•ꢁHigh DC Current Gain -  
= 70 (Min) @ I = 500 mAdc  
= 45 (Min) @ I = 2.0 Adc  
h
FE  
C
C
= 10 (Min) @ I = 5.0 Adc  
C
•ꢁLow Collector-Emitter Saturation Voltage -  
= 0.3 Vdc (Max) @ I = 500 mAdc  
= 0.75 Vdc (Max) @ I = 2.0 Adc  
V
CE(sat)  
C
C
•ꢁHigh Current-Gain - Bandwidth Product -  
TO-225  
CASE 77  
STYLE 1  
f = 65 MHz (Min) @ I  
= 100 mAdc  
T
C
3
2
1
•ꢁAnnular Construction for Low Leakage -  
CBO  
I
= 100 nAdc @ Rated V  
CB  
•ꢁPb-Free Packages are Available*  
MARKING DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
40  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
V
CEO  
YWW  
JE2x0G  
V
25  
CB  
EB  
V
8.0  
Collector Current - Continuous  
- Peak  
I
C
5.0  
10  
Y
WW  
= Year  
= Work Week  
Base Current  
I
B
1.0  
Adc  
JE2x0 = Device Code  
x = 0 or 1  
Total Power Dissipation @ T = 25_C  
P
15  
0.12  
W
mW/_C  
W
mW/_C  
_C  
C
D
Derate above 25_C  
G
= Pb-Free Package  
Total Power Dissipation @ T = 25_C  
P
D
1.5  
0.012  
C
Derate above 25_C  
ORDERING INFORMATION  
stg  
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
MJE200  
TO-225  
500 Units/Box  
500 Units/Box  
TO-225  
(Pb-Free)  
Symbol  
Max  
8.34  
83.4  
Unit  
_C/W  
_C/W  
MJE200G  
Thermal Resistance, Junction-to-Case  
q
JC  
MJE210  
TO-225  
500 Units/Box  
500 Units/Box  
Thermal Resistance,  
Junction-to-Ambient  
q
JC  
TO-225  
(Pb-Free)  
MJE210G  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MJE210T  
TO-225  
50 Units/Rail  
50 Units/Rail  
TO-225  
(Pb-Free)  
MJE210TG  
*For additional information on our Pb-Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
July, 2007 - Rev. 12  
1
Publication Order Number:  
MJE200/D  
123456

中文翻译

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MJE210T 替代型号

型号 品牌 替代类型 描述 数据表
MJE210TG ONSEMI

类似代替

 Complementary Silicon Power Plastic Transistors
MJE210 ONSEMI

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 POWER TRANSISTORS COMPLEMENTARY SILICON
MJE210G ONSEMI

功能相似

 Complementary Silicon Power Plastic Transistors

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