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MJE210 PDF预览

MJE210

更新时间: 2024-11-22 14:50:39
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
18页 494K
描述
25V,5A,1.5W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

MJE210 数据手册

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MJE200 NPN  
MJE210 PNP  
www.centralsemi.com  
COMPLEMENTARY SILICON  
POWER TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR MJE200, MJE210  
types are complementary silicon transistors designed  
for high gain amplifier applications.  
MARKING: FULL PART NUMBER  
TO-126 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
40  
25  
CBO  
CEO  
EBO  
V
V
8.0  
Continuous Collector Current  
Peak Collector Current  
Continuous Base Current  
Power Dissipation  
I
5.0  
A
C
I
10  
A
CM  
I
1.0  
A
B
P
1.5  
W
D
D
Power Dissipation (T =25°C)  
C
P
15  
W
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
83.4  
8.34  
°C  
°C/W  
°C/W  
J
stg  
Thermal Resistance  
Θ
JA  
JC  
Thermal Resistance  
Θ
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
C
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
UNITS  
I
I
I
V
V
V
=40V  
100  
nA  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=40V, T =125°C  
J
=8.0V  
100  
100  
μA  
nA  
V
BV  
I =10mA  
25  
CEO  
CE(SAT)  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
C
V
V
V
V
V
I =500mA, I =50mA  
0.3  
0.75  
1.8  
V
C
B
I =2.0A, I =200mA  
V
C
B
I =5.0A, I =1.0A  
V
C
B
I =5.0A, I =1.0A  
2.5  
V
C
B
V
=1.0V, I =2.0A  
1.6  
V
CE  
CE  
CE  
CE  
CE  
CB  
CB  
C
h
h
h
V
V
V
V
V
V
=1.0V, I =500mA  
70  
45  
10  
65  
C
=1.0V, I =2.0A  
180  
FE  
C
=2.0V, I =5.0A  
FE  
C
f
=10V, I =100mA, f=10MHz  
MHz  
pF  
T
C
C
C
=10V, I =0, f=100kHz (MJE200)  
80  
ob  
ob  
E
=10V, I =0, f=100kHz (MJE210)  
120  
pF  
E
R1 (2-May 2012)  

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