Datasheet > MJE210_03

MJE210_03

更新时间： 2024-11-02 04:15:31

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
4页	47K
描述
SILICON PNP TRANSISTOR

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MJE210_03 数据手册

MJE210

SILICON PNP TRANSISTOR

■

STMicroelectronics PREFERRED

SALESTYPE

PNP TRANSISTOR

DESCRIPTION

The MJE210 is a silicon Epitaxial-Base PNP

transistor in Jedec SOT-32 plastic package,

designed for low voltage, low power, high gain

audio amplifier applications.

SOT-32

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage (I_E= 0)

Collector-Emitter Voltage (I_B= 0)

Base-Emitter Voltage (I_C= 0)

Collector Current

-40

-25

-8

-5

I_CM

Collector Peak Current (t_p< 5 ms)

Base Current

-10

-1

I_B

1.5

Total Power Dissipation at T_case≤ 25 C

P_tot

at T_amb≤ 25 C

T_stg

T_j

Storage Temperature

-65 to 150

150

^oC

Max Operating Junction Temperature

1/4

September 2003

12 3 4

中文翻译

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