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MJE210_03 PDF预览

MJE210_03

更新时间: 2024-11-21 04:15:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
4页 47K
描述
SILICON PNP TRANSISTOR

MJE210_03 数据手册

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MJE210  
®
SILICON PNP TRANSISTOR  
STMicroelectronics PREFERRED  
SALESTYPE  
PNP TRANSISTOR  
DESCRIPTION  
The MJE210 is a silicon Epitaxial-Base PNP  
transistor in Jedec SOT-32 plastic package,  
designed for low voltage, low power, high gain  
audio amplifier applications.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Base-Emitter Voltage (IC = 0)  
Collector Current  
-40  
-25  
-8  
V
V
V
A
A
A
-5  
ICM  
Collector Peak Current (tp < 5 ms)  
Base Current  
-10  
-1  
IB  
o
15  
1.5  
Total Power Dissipation at Tcase 25 C  
Ptot  
W
o
at Tamb 25 C  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
oC  
oC  
Max Operating Junction Temperature  
1/4  
September 2003  

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