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MJE210 PDF预览

MJE210

更新时间: 2024-11-20 22:33:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
4页 66K
描述
SILICON PNP TRANSISTOR

MJE210 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SIP包装说明:PLASTIC, TO-126, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
Factory Lead Time:16 weeks风险等级:5.12
外壳连接:ISOLATED最大集电极电流 (IC):5 A
基于收集器的最大容量:120 pF集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
功耗环境最大值:15 W最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):65 MHzVCEsat-Max:1.8 V
Base Number Matches:1

MJE210 数据手册

 浏览型号MJE210的Datasheet PDF文件第2页浏览型号MJE210的Datasheet PDF文件第3页浏览型号MJE210的Datasheet PDF文件第4页 
MJE210  
SILICON PNP TRANSISTOR  
SGS-THOMSON PREFERRED SALESTYPE  
PNP TRANSISTOR  
DESCRIPTION  
The MJE210 is a silicon epitaxial-base PNP  
transistor in Jedec SOT-32 plastic package,  
designed for low voltage, low power, high gain  
aydio amplifier applications.  
1
2
3
SOT-32  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Base-Emitter Voltage (IC = 0)  
Collector Current  
-40  
-25  
-8  
V
V
V
A
A
A
-5  
ICM  
Collector Peak Current  
Base Current  
-10  
-1  
IB  
o
Total Power Dissipation at Tcase 25 C  
15  
1.5  
Ptot  
W
o
at Tamb 25 C  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
oC  
oC  
Max Operating Junction Temperature  
1/4  
September 1997  

MJE210 替代型号

型号 品牌 替代类型 描述 数据表
MJE210 CENTRAL

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