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BD787

更新时间： 2024-01-03 01:56:33

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
6页	151K
描述
Complementary Plastic Silicon Power Transistors

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BD787 数据手册

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by BD787/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for lower power audio amplifier and low current, high–speed switching

applications.

4 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

•

Low Collector–Emitter Sustaining Voltage —

60 Vdc (Min) — BD787, BD788

CEO(sus)

High Current–Gain — Bandwidth Product —

= 50 MHz (Min) @ I = 100 mAdc

60 VOLTS

15 WATTS

Collector–Emitter Saturation Voltage Specified at 0.5, 1.0, 2.0 and 4.0 Adc

MAXIMUM RATINGS

BD787

BD788

Rating

Symbol

Unit

Vdc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

6.0

Collector Current — Continous

— Peak

4.0

8.0

Adc

CASE 77–08

TO–225AA TYPE

Base Current

1.0

Adc

Total Power Dissipation @ T = 25°C

Derate Above 25 C

0.12

Watts

W/ C

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

8.34

C/W

θJC

1.6

1.2

0.8

8.0

4.0

0.4

100

120

140

160

T, TEMPERATURE (°C)

Figure 1. Power Derating

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

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BD787/D	ETC	Complementary Plastic Silicon Power Transistors	获取价格
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BD788	ISC	Silicon PNP Power Transistor	获取价格
BD788	MOTOROLA	Complementary Plastic Silicon Power Transistors	获取价格
BD788	ONSEMI	POWER TRANSISTORS COMPLEMENTARY SILICON	获取价格