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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MJE205K | NJSEMI |
获取价格 |
MEDIUM-POWER NPN SILICON TRANSISTORS |
|
| MJE2090 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE2091 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE2092 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE2093 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE-20A | NUVOTEM TALEMA |
获取价格 |
T1/E1/CEPT/ISDN-PRI SMD Transformers |
|
| MJE20S2 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE210 | STMICROELECTRONICS |
获取价格 |
SILICON PNP TRANSISTOR |
|
| MJE210 | SAMSUNG |
获取价格 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER) |
|
| MJE210 | FAIRCHILD |
获取价格 |
Feature |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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