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| 型号 | 品牌 | 替代类型 | 描述 | 数据表 |
| 2N5872 | MICROSEMI |
功能相似  |
Power Bipolar Transistor, 7A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, |
|
| 2N5871 | MICROSEMI |
功能相似 |
Power Bipolar Transistor, 7A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin, |
|
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MJE210_03 | STMICROELECTRONICS |
获取价格 |
SILICON PNP TRANSISTOR |
|
| MJE2100 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE2101 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE2102 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE2103 | NJSEMI |
获取价格 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS |
|
| MJE210G | ONSEMI |
获取价格 |
Complementary Silicon Power Plastic Transistors |
|
| MJE210LEADFREE | CENTRAL |
获取价格 |
暂无描述 |
|
| MJE210STU | FAIRCHILD |
获取价格 |
FAIRCHILD Small Signal Transistors |
|
| MJE210STU | ONSEMI |
获取价格 |
5.0 A, 25 V PNP Bipolar Power Transistor |
|
| MJE210T | ONSEMI |
获取价格 |
Complementary Silicon Power Plastic Transistors |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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