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MJE18206

更新时间： 2024-11-01 22:46:15
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管
页数 文件大小 规格书
12页 506K
描述
POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS

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中文翻译

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MJE18206 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
风险等级：5.85其他特性：LEADFORM OPTIONS ARE AVAILABLE
外壳连接：COLLECTOR最大集电极电流 (IC)：8 A
基于收集器的最大容量：200 pF集电极-发射极最大电压：600 V
配置：SINGLE最小直流电流增益 (hFE)：5
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：NPN
功耗环境最大值：100 W最大功率耗散 (Abs)：100 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：13 MHz最大关闭时间（toff）：4500 ns
最大开启时间（吨）：250 nsVCEsat-Max：0.75 V
Base Number Matches：1

MJE18206 数据手册

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Order this document  
by MJE18206/D  
SEMICONDUCTOR TECHNICAL DATA  
POWER TRANSISTORS  
8 AMPERES  
1200 VOLTS  
40 and 100 WATTS  
The MJE/MJF18206 have an application specific state–of–the–art die dedicated to  
the electronic ballast (“light ballast”) and power supply applications.  
•
Improved Global Efficiency Due to Low Base Drive Requirements:  
— High and Flat DC Current Gain h  
— Fast Switching  
FE  
— No Coil Required in Base Circuit for fast Turn–Off (No Current Tail)  
Full Characterization at 125 C  
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric  
Distributions  
•
•
•
Two Package Choices: Standard TO–220 or Isolated TO–220  
MAXIMUM RATINGS  
Rating  
Symbol MJE18206 MJF18206  
Unit  
Vdc  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
V
600  
1200  
1200  
10  
CEO  
CBO  
V
V
CES  
EBO  
Collector Current — Continuous  
— Peak (1)  
I
8
16  
CASE 221A–06  
TO–220AB  
C
I
CM  
Base Current — Continuous  
— Peak (1)  
I
5
9
Adc  
B
I
BM  
RMS Isolation Voltage (2)  
(for 1 sec, R.H. ≤ 30%)  
Per Figure 22  
Per Figure 23  
Per Figure 24  
V
V
V
4500  
3500  
1500  
Volts  
ISOL1  
ISOL2  
ISOL3  
T
C
= 25°C  
*Total Device Dissipation @ T = 25°C  
*Derate above 25 C  
P
D
100  
0.8  
40  
0.32  
Watt  
W/ C  
C
Operating and Storage Temperature  
T , T  
J stg  
–65 to 150  
C
THERMAL CHARACTERISTICS  
Rating  
Symbol MJE18206 MJF18206  
Unit  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
1.25  
62.5  
3.125  
62.5  
C/W  
CASE 221D–02  
Maximum Lead Temperature for Soldering  
Purposes: 1/8″ from Case for 5 Seconds  
T
L
260  
C
TO–220 FULLPACK  
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  
10%.  
(2) Proper strike and creepage distance must be provided.  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.  
Motorola, Inc. 1995
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与MJE18206相关器件

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MJE18206AJ ONSEMI

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 		8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18206AK ONSEMI

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 		8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18206AS ONSEMI

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 		TRANSISTOR 8 A, 600 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18206AU ONSEMI

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 		8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18206BD ONSEMI

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 		8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18206BS ONSEMI

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 		8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18206BU ONSEMI

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 		8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE18206BV ONSEMI

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 		TRANSISTOR 8 A, 600 V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE18206DW ONSEMI

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 		8A, 600V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

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