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MJE181 PDF预览

MJE181

更新时间: 2024-11-01 22:46:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关音频放大器晶体管局域网
页数 文件大小 规格书
4页 52K
描述
Low Power Audio Amplifier Low Current High Speed Switching Applications

MJE181 数据手册

 浏览型号MJE181的Datasheet PDF文件第2页浏览型号MJE181的Datasheet PDF文件第3页浏览型号MJE181的Datasheet PDF文件第4页 
MJE180/181/182  
Low Power Audio Amplifier  
Low Current High Speed Switching Applications  
TO-126  
1. Emitter 2.Collector 3.Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage : MJE180  
60  
80  
100  
V
V
V
CBO  
: MJE181  
: MJE182  
Collector-Emitter Voltage : MJE180  
40  
60  
80  
V
V
V
CEO  
: MJE181  
: MJE182  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
7
V
A
EBO  
I
3
C
I
I
6
1
A
CP  
B
A
P
Collector Dissipation (T =25°C)  
1.5  
W
W
°C  
°C  
C
a
P
T
T
Collector Dissipation (T =25°C)  
12.5  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Max. Units  
BV  
Collector -Emitter Breakdown Voltage  
CEO  
: MJE180  
: MJE181  
: MJE182  
I
= 10mA, I = 0  
40  
60  
80  
V
V
V
C
B
I
Collector Cut-off Current : MJE180  
V
V
V
V
V
V
= 60V, I = 0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
µA  
µA  
µA  
mA  
mA  
mA  
CBO  
CB  
CB  
CB  
CB  
CB  
CB  
B
: MJE181  
: MJE182  
: MJE180  
: MJE181  
: MJE182  
= 80V, I = 0  
E
= 100V, I = 0  
E
= 60V, I = 0 @ T = 150°C  
E
C
= 80V, I = 0 @ T = 150°C  
E
C
= 100V, I = 0 @ T = 150°C  
E
C
I
Emitter Cut-off Current  
DC Current Gain  
V
= 7V, I = 0  
0.1  
µA  
EBO  
BE  
C
h
V
V
V
= 1V, I = 100mA  
50  
30  
12  
250  
FE  
CE  
CE  
CE  
C
= 1V, I = 500mA  
C
= 1V, I = 1.5A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
I
I
I
= 500mA, I = 50mA  
0.3  
0.9  
1.7  
V
V
V
CE  
C
C
C
B
= 1.5A, I = 150mA  
B
= 3A, I = 600mA  
B
V
V
(sat)  
(on)  
I
I
= 1.5A, I = 150mA  
1.5  
2.0  
V
V
BE  
BE  
C
C
B
= 3A, I = 600mA  
B
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
V
V
= 1V, I = 500mA  
1.2  
V
CE  
CE  
CB  
C
f
= 10V, I = 100mA  
50  
MHz  
pF  
T
C
C
= 10V, I = 0, f = 0.1MHz  
E
30  
ob  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  

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