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MJE182 PDF预览

MJE182

更新时间: 2024-11-03 14:53:11
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
17页 232K
描述
80V,3A,1.5W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

MJE182 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.18Is Samacsys:N
最大集电极电流 (IC):3 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MJE182 数据手册

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145 Adams Avenue, Hauppauge, NY 11788 USA  
Tel: (631) 435-1110 • Fax: (631) 435-1824  

MJE182 替代型号

型号 品牌 替代类型 描述 数据表
MJE182STU FAIRCHILD

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Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/
MJE182G ONSEMI

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Complementary Plastic Silicon Power Transistors 40 − 60 − 80 VOLTS 12.5 WATTS
2N4923G ONSEMI

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Medium−Power Plastic NPN Silicon Transistors

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