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MJE181 PDF预览

MJE181

更新时间: 2024-11-02 10:55:47
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页数 文件大小 规格书
3页 103K
描述
Silicon NPN Power Transistors

MJE181 数据手册

 浏览型号MJE181的Datasheet PDF文件第2页浏览型号MJE181的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJE180/181/182  
DESCRIPTION  
·With TO-126 package  
·Complement to type MJE170/171/172  
APPLICATIONS  
·For low power audio amplifier and low  
current high speed switching applications  
PINNING (see Fig.2)  
PIN  
DESCRIPTION  
1
Emitter  
Collector;connected to  
mounting base  
2
3
Base  
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
MJE180  
MJE181  
MJE182  
MJE180  
MJE181  
MJE182  
60  
80  
VCBO  
Collector-base voltage  
Open emitter  
V
V
100  
40  
VCEO  
Collector-emitter voltage  
Open base  
60  
80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Collector current-peak  
Base current  
Open collector  
7
V
A
A
A
3
6
1
Ta=25ꢀ  
TC=25ꢀ  
1.5  
12.5  
150  
-65~150  
PC  
Collector power dissipation  
W
Junction temperature  
Storage temperature  
Ti  
Tstg  

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