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MJE181 PDF预览

MJE181

更新时间: 2024-11-01 22:46:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 175K
描述
POWER TRANSISTORS COMPLEMENTARY SILICON

MJE181 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:TO-225AA包装说明:PLASTIC, CASE 77-09, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.21Is Samacsys:N
最大集电极电流 (IC):3 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):12
JEDEC-95代码:TO-225AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

MJE181 数据手册

 浏览型号MJE181的Datasheet PDF文件第2页浏览型号MJE181的Datasheet PDF文件第3页浏览型号MJE181的Datasheet PDF文件第4页 
Order this document  
by MJE171/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for low power audio amplifier and low current, high speed switching  
applications.  
Collector–Emitter Sustaining Voltage —  
V
V
= 60 Vdc — MJE171, MJE181  
= 80 Vdc — MJE172, MJE182  
CEO(sus)  
CEO(sus)  
DC Current Gain —  
h
h
= 30 (Min) @ I = 0.5 Adc  
FE  
FE  
C
*Motorola Preferred Device  
= 12 (Min) @ I = 1.5 Adc  
C
Current–Gain — Bandwidth Product —  
3 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
f
T
= 50 MHz (Min) @ I = 100 mAdc  
C
Annular Construction for Low Leakages —  
= 100 nA (Max) @ Rated V  
I
CBO  
CB  
6080 VOLTS  
MAXIMUM RATINGS  
12.5 WATTS  
MJE171  
MJE181  
MJE172  
MJE182  
Rating  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Base Voltage  
Collector–Emitter Voltage  
Emitter–Base Voltage  
V
80  
60  
100  
80  
CB  
V
CEO  
V
7.0  
EB  
Collector Current — Continuous  
Peak  
I
C
3.0  
6.0  
Base Current  
I
1.0  
1.5  
0.012  
Adc  
B
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
Watts  
W/ C  
D
CASE 77–08  
TO–225AA  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
12.5  
0.1  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
10  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
θ
θ
JC  
JA  
83.4  
T
T
C
A
2.8  
14  
2.4 12  
2.0 10  
1.6 8.0  
1.2 6.0  
0.8 4.0  
0.4 2.0  
T
C
T
A
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (  
°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1995

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