Datasheet > MJE341

MJE341

更新时间： 2024-10-31 22:30:15

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	133K
描述
0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

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MJE341 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.26
最大集电极电流 (IC)：	0.5 A	基于收集器的最大容量：	15 pF
集电极-发射极最大电压：	150 V	配置：	SINGLE
最小直流电流增益 (hFE)：	20	JEDEC-95代码：	TO-225AA
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	功耗环境最大值：	20 W
最大功率耗散 (Abs)：	20 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	15 MHz
VCEsat-Max：	2.3 V	Base Number Matches：	1

MJE341 数据手册

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by MJE341/D

SEMICONDUCTOR TECHNICAL DATA

0.5 AMPERE

POWER TRANSISTORS

NPN SILICON

. . . useful for medium voltage applications requiring high f such as converters and

extended range amplifiers.

150–200 VOLTS

20 WATTS

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Base Current

Symbol

MJE341

150

MJE344

200

Unit

Vdc

CEO

175

200

Vdc

3.0

5.0

Vdc

500

mAdc

250

Total Power Dissipation @ T = 25 C

Derate above 25 C

0.16

Watts

W/ C

CASE 77–08

TO–225AA TYPE

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

6.25

C/W

1.0

0.5

500 µs

ALL

1.0 ms

ALL

0.2

0.1

T = 150°C

0.05

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

0.02

0.01

THERMAL LIMIT T = 25°C

100

200

300

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

The data of Figure 1 is based on T

= 150 C; T is vari-

J(pk)

able depending on conditions. Second breakdown pulse lim-

its are valid for duty cycles to 10% provided T 150 C.

down. Safe operating area curves indicate I – V

limits of

J(pk)

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion then the curves indicate.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less then the limitations

imposed by second breakdown.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

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与MJE341相关器件

型号	品牌	获取价格	描述	数据表
MJE341LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 0.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
MJE3439	MOTOROLA	获取价格	0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS
MJE3439	ONSEMI	获取价格	POWER TRANSISTOR NPN SILICON
MJE3439	CENTRAL	获取价格	350V,300mA,15W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
MJE3439	NJSEMI	获取价格	Trans GP BJT NPN 350V 0.3A 3-Pin TO-225 Bulk
MJE3439G	ONSEMI	获取价格	NPN Silicon High−Voltage Power Transistor
MJE3439LEADFREE	CENTRAL	获取价格	暂无描述
MJE344	MOTOROLA	获取价格	0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS
MJE344	ONSEMI	获取价格	POWER TRANSISTORS NPN SILICON
MJE344	CENTRAL	获取价格	200V,500mA,20W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

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