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MJD117T4G PDF预览

MJD117T4G

更新时间： 2024-11-04 03:09:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关
页数 文件大小 规格书
8页 102K
描述
Complementary Darlington Power Transistors

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中文翻译

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MJD117T4G 技术参数

是否无铅：不含铅生命周期：Active
包装说明：ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
Factory Lead Time：1 week风险等级：0.43
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：2 A集电极-发射极最大电压：100 V
配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE)：200
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：20 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：25 MHz
Base Number Matches：1

MJD117T4G 数据手册

 浏览型号MJD117T4G的Datasheet PDF文件第2页浏览型号MJD117T4G的Datasheet PDF文件第3页浏览型号MJD117T4G的Datasheet PDF文件第4页浏览型号MJD117T4G的Datasheet PDF文件第5页浏览型号MJD117T4G的Datasheet PDF文件第6页浏览型号MJD117T4G的Datasheet PDF文件第7页 
MJD112 (NPN)  
MJD117 (PNP)  
Preferred Device  
Complementary Darlington  
Power Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, converters,  
and power amplifiers.  
SILICON  
POWER TRANSISTORS  
2 AMPERES  
Features  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
100 VOLTS, 20 WATTS  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
• Electrically Similar to Popular TIP31 and TIP32 Series  
• Pb−Free Packages are Available  
MARKING  
DIAGRAMS  
4
YWW  
J11xG  
MAXIMUM RATINGS  
2
1
3
Rating  
Symbol  
Max  
Unit  
DPAK  
Collector−Emitter Voltage  
V
100  
Vdc  
CASE 369C  
CEO  
Collector−Base Voltage  
Emitter−Base Voltage  
V
V
100  
5
Vdc  
Vdc  
Adc  
CB  
EB  
4
I
2
4
Collector Current − Continuous  
− Peak  
C
B
YWW  
J11xG  
Base Current  
I
50  
mAdc  
1
P
20  
0.16  
W
W/°C  
Total Power Dissipation @ T = 25°C  
D
C
2
Derate above 25°C  
3
DPAK−3  
CASE 369D  
Total Power Dissipation (Note1)  
P
W
W/°C  
D
1.75  
0.014  
@ T = 25°C  
A
Derate above 25°C  
Y
WW  
x
= Year  
= Work Week  
= 2 or 7  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
°C  
J
stg  
G
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Thermal Resistance, Junction−to−Case  
R
q
JC  
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
JA  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. These ratings are applicable when surface mounted on the minimum pad  
sizes recommended.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 7  
MJD112/D  
 
12345678

中文翻译

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MJD117T4G 替代型号

型号 品牌 替代类型 描述 数据表
MJD117 ONSEMI

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MJD117G ONSEMI

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 Complementary Darlington Power Transistors

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