5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率双极晶体管> MJD117T4
MJD117T4 PDF预览

MJD117T4

更新时间： 2024-11-03 21:53:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
8页 151K
描述
Complementary Darlington Power Transistors

阅读下载

中文翻译

获取价格

MJD117T4 技术参数

是否无铅： 含铅生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.06Is Samacsys：N
外壳连接：COLLECTOR最大集电极电流 (IC)：2 A
集电极-发射极最大电压：100 V配置：DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE)：200JESD-30 代码：R-PSSO-G2
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：2
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240极性/信道类型：PNP
最大功率耗散 (Abs)：50 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：25 MHzBase Number Matches：1

MJD117T4 数据手册

 浏览型号MJD117T4的Datasheet PDF文件第2页浏览型号MJD117T4的Datasheet PDF文件第3页浏览型号MJD117T4的Datasheet PDF文件第4页浏览型号MJD117T4的Datasheet PDF文件第5页浏览型号MJD117T4的Datasheet PDF文件第6页浏览型号MJD117T4的Datasheet PDF文件第7页 
MJD112 (NPN)  
MJD117 (PNP)  
Preferred Device  
Complementary Darlington  
Power Transistors  
DPAK For Surface Mount Applications  
http://onsemi.com  
Designed for general purpose power and switching such as output or  
driver stages in applications such as switching regulators, converters,  
and power amplifiers.  
SILICON  
POWER TRANSISTORS  
2 AMPERES  
Features  
• Pb−Free Packages are Available  
100 VOLTS  
• Lead Formed for Surface Mount Applications in Plastic Sleeves  
(No Suffix)  
20 WATTS  
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)  
• Lead Formed Version in 16 mm Tape and Reel  
(“T4” and “RL” Suffix)  
MARKING  
DIAGRAMS  
• Electrically Similar to Popular TIP31 and TIP32 Series  
4
DPAK  
CASE 369C  
YWW  
J11x  
2
1
MAXIMUM RATINGS  
3
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Max  
100  
100  
5
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
4
V
CB  
DPAK−3  
CASE 369D  
YWW  
J11x  
V
EB  
I
C
2
4
Collector Current − Continuous  
Peak  
1
2
3
Base Current  
I
B
50  
mAdc  
Y
WW  
x
= Year  
= Work Week  
= 2 or 7  
P
D
20  
0.16  
W
W/°C  
Total Power Dissipation @ T = 25°C  
C
Derate above 25°C  
P
D
1.75  
0.014  
Total Power Dissipation* @ T = 25°C  
W
W/°C  
A
Derate above 25°C  
Operating and Storage Junction Temperature  
Range  
T , T  
−65 to  
+150  
°C  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
J
stg  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
6.25  
71.4  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient*  
R
q
JC  
JA  
R
q
*These ratings are applicable when surface mounted on the minimum pad sizes  
recommended.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 5  
MJD112/D  
12345678

中文翻译

下载PDF

MJD117T4 替代型号

型号 品牌 替代类型 描述 数据表
MJD117RLG ONSEMI

完全替代

 2.0 A，100 V，PNP 达林顿双极功率晶体管
MJD117T4G ONSEMI

类似代替

 Complementary Darlington Power Transistors

与MJD117T4相关器件

型号 品牌 获取价格 描述 数据表
MJD117T4G ONSEMI

获取价格

 		Complementary Darlington Power Transistors
MJD117TF FAIRCHILD

获取价格

 		Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic
MJD117TF ONSEMI

获取价格

 		2.0 A, 100 V PNP Darlington Bipolar Power Transistor, 2000-REEL
MJD122 WEITRON

获取价格

 		NPN PLASTIC ENCAPSULATE TRANSISTORS
MJD122 CDIL

获取价格

 		COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD122 DCCOM

获取价格

 		TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
MJD122 ONSEMI

获取价格

 		Complementary Darlington Power Transistors
MJD122 STMICROELECTRONICS

获取价格

 		COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD122 FAIRCHILD

获取价格

 		Complementary Darlington Power Transistors
MJD122 MOTOROLA

获取价格

 		SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

与MJD117T4相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证