Datasheet > MJD122_05

MJD122_05

更新时间： 2024-11-02 04:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	87K
描述
Complementary Darlington Power Transistor

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中文翻译

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MJD122_05 数据手册

MJD122 (NPN)

MJD127 (PNP)

Preferred Device

Complementary Darlington

Power Transistor

DPAK For Surface Mount Applications

http://onsemi.com

Designed for general purpose amplifier and low speed switching

applications.

SILICON

POWER TRANSISTOR

8 AMPERES

100 VOLTS, 20 WATTS

Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves

• Surface Mount Replacements for 2N6040−2N6045 Series,

TIP120−TIP122 Series, and TIP125−TIP127 Series

• Monolithic Construction With Built−in Base−Emitter Shunt Resistors

• High DC Current Gain: h = 2500 (Typ) @ I = 4.0 Adc

DPAK

CASE 369C

STYLE 1

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

MARKING DIAGRAM

• Pb−Free Packages are Available

MAXIMUM RATINGS

YWW

J12xG

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Symbol

Value

100

Unit

Vdc

Adc

CEO

= Year

WW = Work Week

= 2 or 7

= Pb−Free Package

Collector Current − Continuous

− Peak

Base Current

120

mAdc

ORDERING INFORMATION

Total Power Dissipation @ T = 25°C

0.16

W/°C

†

75 Units/Rail

Derate above 25°C

Device

Package

Shipping

MJD122

DPAK

Total Power Dissipation (Note 1)

@ T = 25°C

1.75

0.014

W/°C

MJD122G

DPAK

Derate above 25°C

(Pb−Free)

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

°C

stg

MJD122T4

DPAK

2500/Tape & Reel

MJD122T4G

DPAK

THERMAL CHARACTERISTICS

Characteristic

(Pb−Free)

Symbol

Max

Unit

DPAK

75 Units/Rail

MJD127

Thermal Resistance

Junction−to−Case

6.25

°C/W

MJD127G

DPAK

(Pb−Free)

Thermal Resistance

71.4

°C/W

MJD127T4

DPAK

2500/Tape & Reel

Junction−to−Ambient (Note1)

MJD127T4G

DPAK

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 7

MJD122/D

12 3 4 5 6 7

中文翻译

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与MJD122_05相关器件

型号	品牌	获取价格	描述	数据表
MJD122_07	STMICROELECTRONICS	获取价格	nullLow voltage power Darlington transistor
MJD122_09	FAIRCHILD	获取价格	NPN Silicon Darlington Transistor
MJD122_11	ONSEMI	获取价格	Complementary Darlington Power Transistor
MJD122-1	MOTOROLA	获取价格	SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
MJD122-1	STMICROELECTRONICS	获取价格	COMPLEMENTARY POWER DARLINGTON TRANSISTORS
MJD122-1	SAMSUNG	获取价格	Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
MJD122-1G	ONSEMI	获取价格	8.0 A，100 V，NPN 达林顿双极功率晶体管
MJD122G	ONSEMI	获取价格	Complementary Darlington Power Transistor
MJD122NPN	CDIL	获取价格	COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS
MJD122R-HAF	SWST	获取价格	达林顿三极管

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