Datasheet > MJD122

MJD122

更新时间： 2024-11-05 02:54:23

品牌	Logo	应用领域
CDIL		晶体管
页数	文件大小	规格书
5页	408K
描述
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

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中文翻译

获取价格

数据手册

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MJD122 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

MJD122 NPN

MJD127 PNP

DPAK (TO-252)

Plastic Package

Designed for General Purpose Amplifier and Low Speed Switching Applications

ABSOLUTE MAXIMUM RATINGS

VALUE

100

DESCRIPTION

SYMBOL

UNIT

V_CBO

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Collector Current Peak

Base Current

V_CEO

V_EBO

I_C

I_B

120

P_D

Total Power Dissipation T_c=25ºC

0.16

Derate Above 25ºC

W/ºC

Operating and Storage Junction

Temperature Range

T_{j, Tstg}

- 65 to +150

6.25

ºC

THERMAL CHARACTERISTICS

Junction to Case

R_{th (j-c)}

ºC/W

ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

V_CEO

TEST CONDITION

MIN TYP MAX

UNIT

I_C=30mA, I_B=0

V_CE=50V, I_B=0

V_CB=100V, I_E=0

V_EB=5V, I_C=0

Collector Emitter Sustaining Voltage

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

100

I_CEO

I_CBO

I_EBO

h_FE

I_C=4A, V_CE=4V

I_C=8A, V_CE=4V

I_C=4A, I_B=16mA

I_C=8A, I_B=80mA

I_C=4A, V_CE=4V

1000

100

12000

V_{CE (sat)}

Collector Emitter Saturation Voltage

4.5

2.8

*V_{BE (sat)}

V_{BE (on)}

Base Emitter Saturation Voltage

Base Emitter On Voltage

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth product

Output Capacitance

h_fe

V_CE=4V, I_C=3A, f=1MHz

I_E=0, V_CB=10V, f=0.1MHz

MHz

C_ob

MJD127

MJD122

300

200

h_fe

I_C=3A, V_CE=4V, f=1kHz

Small Signal Current Gain

300

*Pulse test: Pulse width < 300ms, duty cycle < 2%

MJD122_127 Rev290704E

Data Sheet

Page 1 of 5

Continental Device India Limited

12 3 4 5

中文翻译

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