Datasheet > MJD122 TO-252

MJD122 TO-252

更新时间： 2024-11-03 17:00:47

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	479K
描述
100V,8A,General Purpose NPN Bipolar Transistor

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MJD122 TO-252 数据手册

Complementary Power Darlington Transistor

MJD122

Features



High DC current gain

Complement to MJD127

Mechanic al Data



Case: TO-251, TO-252

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

TO-251

TO-252

Ordering Information

Part Number

MJD122

Package

Shipping Quantity

Marking Code

MJD122

TO-251

TO-252

80pcs / Tube

MJD122

80pcs / Tube or 2500pcs / Tape & Reel

MJD122

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Pulse)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

100

Unit

I_CM

Base Current

I_B

0.12

Thermal Characteristics

Parameter

Power Dissipation (T_C= 25°C)

Thermal Resistance (Junction-to-Case)

Junction Temperature

Symbol

P_D

Value

Unit

C/W

°C

R_θJC

T_J

6.25

150

Storage Temperature Range

T_STG

-55 ~ +150

°C

STM0303A: October 2022 [1.0]

www.gmesemi.com

12 3 4 5

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