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MJD122T4 PDF预览

MJD122T4

更新时间: 2024-11-05 22:30:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管达林顿晶体管
页数 文件大小 规格书
8页 94K
描述
COMPLEMENTARY POWER DARLINGTON TRANSISTORS

MJD122T4 数据手册

 浏览型号MJD122T4的Datasheet PDF文件第2页浏览型号MJD122T4的Datasheet PDF文件第3页浏览型号MJD122T4的Datasheet PDF文件第4页浏览型号MJD122T4的Datasheet PDF文件第5页浏览型号MJD122T4的Datasheet PDF文件第6页浏览型号MJD122T4的Datasheet PDF文件第7页 
MJD122-1 / MJD122T4  
MJD127-1 / MJD127T4  
COMPLEMENTARY POWER  
DARLINGTON TRANSISTORS  
Ordering  
Code  
Marking  
Package  
Shipment  
MJD122T4 MJD122  
MJD122-1 MJD122  
MJD127T4 MJD127  
MJD127-1 MJD127  
TO-252 (DPAK) Tape & Reel  
TO-251 (IPAK) Tube  
TO-252 (DPAK) Tape & Reel  
TO-251 (IPAK) Tube  
3
3
1
STMicroelectronics PREFERRED SALESTYPES  
LOW BASE-DRIVE REQUIREMENTS  
INTEGRATED ANTIPARALLEL  
COLLECTOR-EMITTER DIODE  
THROUGH HOLE TO-251 (IPAK)  
POWER PACKAGE IN TUBE (SUFFIX “-1”)  
SURFACE MOUNTING TO-252 (DPAK)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4”)  
2
1
TO-251  
IPAK  
TO-252  
DPAK  
(Suffix ”T4”)  
(Suffix ”-1”)  
ELECTRICALLY SIMILAR TO TIP122 AND  
TIP127  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS:  
GENERAL PURPOSE SWITCHING AND  
AMPLIFIER  
DESCRIPTION  
The MJD122 and MJD127 form complementary  
NPN - PNP pair. They are manufactured using  
Epitaxial Base technology for cost-effective  
performance.  
R
Typ. = 150  
R
Typ. = 10 KΩ  
2
1
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
MJD122  
MJD127  
V
Collector-Base Voltage (I = 0)  
100  
100  
5
V
V
CBO  
E
V
Collector-Emitter Voltage (I = 0)  
CEO  
B
V
Emitter-Base Voltage (I = 0)  
V
EBO  
C
I
Collector Current  
5
A
C
I
Collector Peak Current (t < 5 ms)  
8
A
CM  
p
I
Base Current  
0.1  
20  
A
B
P
Total Dissipation at T = 25 °C  
W
°C  
°C  
tot  
c
T
stg  
Storage Temperature  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
For PNP types voltage and current values are negative.  
August 2002  
1/8  

MJD122T4 替代型号

型号 品牌 替代类型 描述 数据表
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